Title (en)

SEMICONDUCTOR RADIATION DETECTOR

Publication

EP 0175369 A3 19860903 (EN)

Application

EP 85111873 A 19850919

Priority

JP 19599084 A 19840919

Abstract (en)

[origin: US4689649A] A semiconductor device for detecting incident gamma-radiation wherein the output from the device is relatively independent of the energy of the incident radiation. The device includes a semiconductor substrate having a depletion layer formed therein by an applied voltage. The depletion layer is shaped such that it includes a plurality of elongated projections within a plane parallel to the surface of the substrate. The minimum distance between the edge of the substrate and the outer extent of the depletion layer is substantially equal to the average range of mobility of secondary electrons created by the gamma rays having the highest energy of the gamma-rays to be detected. The device further includes means for counting the current pulses generated in the depletion layer by secondary electrons created by the incident gamma rays.

IPC 1-7

H01L 31/10; G01T 1/24

IPC 8 full level

H01L 31/09 (2006.01); G01T 1/24 (2006.01); H01L 31/0352 (2006.01); H01L 31/118 (2006.01)

CPC (source: EP US)

G01T 1/241 (2013.01 - EP US); H01L 31/03529 (2013.01 - EP US); H01L 31/1185 (2013.01 - EP US); Y02E 10/50 (2013.01 - US)

Citation (search report)

• [Y] US 4394676 A 19830719 - AGOURIDIS DIMITRIOS C
• [Y] FR 2443745 A1 19800704 - THOMSON CSF
• [A] DE 2543065 A1 19770331 - SIEMENS AG
• [A] PATENTS ABSTRACTS OF JAPAN, vol. 8, no. 142 (E-254) [1579], 3rd July 1984; & JP-A-59 052 884 (FUJI DENKI SOUGOU KENKYUSHO K.K.) 27-03-1984
• [A] PATENTS ABSTRACTS OF JAPAN, vol. 3, no. 15 (E-89), 9th February 1979, page 94 E 89; & JP-A-53 142 886 (TOKYO SHIBAURA DENKI K.K.) 12-12-1978

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

US 4689649 A 19870825; DE 3583095 D1 19910711; EP 0175369 A2 19860326; EP 0175369 A3 19860903; EP 0175369 B1 19910605; JP H058595 B2 19930202; JP S6174375 A 19860416

DOCDB simple family (application)

US 77162285 A 19850903; DE 3583095 T 19850919; EP 85111873 A 19850919; JP 19599084 A 19840919