EP 0177562 A4 19870603 - NITRIDE BONDING LAYER.
Title (en)
NITRIDE BONDING LAYER.
Title (de)
NITRID-VERBINDUNGSSCHICHT.
Title (fr)
COUCHE DE LIAISON DE NITRURE.
Publication
Application
Priority
US 59215284 A 19840322
Abstract (en)
[origin: WO8504519A1] An integrated circuit chip includes a layer of silicon nitride (4-20) deposited above the upper metallization and silicon oxide intermetallic dielectric (4-10), above which a layer of polyimide (4-50) supports a network of electrical leads; the layer of nitride (4-20) extending completely over the silicon oxide (4-10) from the streets (4-200) at the edge of the die to overlap metallic contacts (4-05) connected from the metallization layer to the upper electrical leads.
IPC 1-7
IPC 8 full level
H01L 21/312 (2006.01); H01L 21/318 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR)
H01L 23/29 (2013.01 - KR); H01L 23/5329 (2013.01 - EP); H01L 2924/0002 (2013.01 - EP)
Citation (search report)
- [X] DE 3116406 A1 19820616 - HITACHI LTD [JP]
- See references of WO 8504519A1
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
WO 8504519 A1 19851010; EP 0177562 A1 19860416; EP 0177562 A4 19870603; JP S61501537 A 19860724; KR 860700075 A 19860131
DOCDB simple family (application)
US 8500454 W 19850319; EP 85901781 A 19850319; JP 50141885 A 19850319; KR 850700325 A 19851121