EP 0177572 A4 19860922 - ACTIVE LEAKAGE RESISTANCE CONTROL TO IMPROVE NUMERICAL CONVERGENCE IN AN ELECTRONIC CIRCUIT SIMULATOR WHICH SEEKS CIRCUIT SOLUTIONS ITERATIVELY.
Title (en)
ACTIVE LEAKAGE RESISTANCE CONTROL TO IMPROVE NUMERICAL CONVERGENCE IN AN ELECTRONIC CIRCUIT SIMULATOR WHICH SEEKS CIRCUIT SOLUTIONS ITERATIVELY.
Title (de)
AKTIVE ABLEITUNGSWIDERSTANDSSTEUERUNG ZUR VERBESSERUNG DER DIGITALEN ANNÄHERUNG IN EINEM ELEKTRONISCHEN SCHALTUNGSSIMULATOR DER WIEDERHOLEND SCHALTUNGSLÖSUNGEN SUCHT.
Title (fr)
COMMANDE DE RESISTANCE A LA FUITE ACTIVE AFIN D'AMELIORER LA CONVERGENCE NUMERIQUE DANS UN SIMULATEUR DE CIRCUIT ELECTRONIQUE QUI RECHERCHE DES SOLUTIONS DE CIRCUIT DE FA ON HYPERACTIVE.
Publication
Application
Priority
US 59776684 A 19840406
Abstract (en)
[origin: WO8504739A1] Operation of an electronic circuit simulator is improved by actively controlling the test leakage resistance values at junctions (12) of active devices while seeking stable circuit solutions of modeled circuitry. By choosing an initial junction leakage resistance value lower that the actual value in each active device being modeled, convergent circuit solutions can be easily obtained, which may in turn be used as initial conditions to achieve the circuit solution for the real circuit with a significantly improved effectiveness.
IPC 1-7
IPC 8 full level
G06F 19/00 (2006.01); G06F 17/50 (2006.01)
CPC (source: EP)
G06F 30/367 (2020.01)
Citation (search report)
- [A] PROCEEDINGS OF THE IEEE, vol. 69, no. 10, October 1981, pages 1264-1280, IEEE, New York, US; G.D. HACHTEL et al.: "A survey of third-generation simulation techniques"
- [A] AUTOMATION AND REMOTE CONTROL, vol. 38, no. 2, February 1977, pages 290-297, V.I. IL'IN et al.: "Analysis of methods of simulation of MOS transistor characteristics for computer-aided design of integrated circuits"
- [A] IEEE 1982, IECON PROCEEDINGS, 15th-19th November 1982, Palo Alto, CA, pages 39-44, IEEE, New York, US; N.A. LOSIC et al.: "A thyristor model for computer-aided power electronics circuit design"
- [T] ELECTRONIC DESIGN, vol. 33, no. 24, October 1985, pages 96-106, Hasbrouck Heights, New Jersey, US; M. SCHINDLER: "For circuit and timing simulators, greater speed and accuracy meet the challenge of denser chips"
- AUTOMATION AND REMOTE CONTROL, vol. 38, no. 2, February 1977, pages 290-297, V.I. IL'IN et al.: "Analysis of methods of simulation of MOS transistor characteristics for computer-aided design of integrated circuits"
- IEEE 1982, IECON PROCEEDINGS, 15th-19th November 1982, Palo Alto, CA, pages 39-44, IEEE, New York, US; N.A. LOSIC et al.: "A thyristor model for computer-aided power electronics circuit design"
- ELECTRONIC DESIGN, vol. 33, no. 24, October 1985, pages 96-106, Hasbrouck Heights, New Jersey, US; M. SCHINDLER: "For circuit and timing simulators, greater speed and accuracy meet the challenge of denser chips"
- See references of WO 8504739A1
Designated contracting state (EPC)
AT BE CH DE FR GB LI LU NL SE
DOCDB simple family (publication)
WO 8504739 A1 19851024; EP 0177572 A1 19860416; EP 0177572 A4 19860922; JP S61501800 A 19860821
DOCDB simple family (application)
US 8500486 W 19850319; EP 85901811 A 19850319; JP 50151685 A 19850319