EP 0178418 A3 19880120 - PROCESS FOR MAKING A SEMICONDUCTOR STRUCTURE
Title (en)
PROCESS FOR MAKING A SEMICONDUCTOR STRUCTURE
Publication
Application
Priority
US 65038984 A 19840914
Abstract (en)
[origin: EP0178418A2] A process is provided for making semiconductor structures. such as CMOS structures, which includes forming on a surface of a semiconductor body (12) a layer from a material which is impervious to oxygen diffusion therethrough and patterning this layer to define the position of both the active and field isolation regions by partially removing this layer from the areas where the field isolation regions are to be formed. This oxygen impervious layer may be a dual dielectric structure consisting of a layer of silicon dioxide (14) adjoinmg the semiconductor body and a layer of silicon nitride (16) adjoining the silicon dioxide. The resulting structure includes an oxygen impervious layer (16b) which is used both for protecting all underlying oxidizing regions from oxidation and for defining the position of the active regions of the structure.
IPC 1-7
IPC 8 full level
H01L 21/033 (2006.01); H01L 21/32 (2006.01); H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01)
CPC (source: EP US)
H01L 21/0334 (2013.01 - EP US); H01L 21/32 (2013.01 - EP US); H01L 21/762 (2013.01 - EP US); H01L 21/823857 (2013.01 - EP US)
Citation (search report)
- [X] EP 0111098 A1 19840620 - IBM [US]
- [X] US 4412375 A 19831101 - MATTHEWS JAMES A [US]
- [X] FR 2525030 A1 19831014 - ATES COMPONENTI ELETTRON [IT]
- [A] US 4135955 A 19790123 - GASNER JOHN T, et al
- [A] US 4271583 A 19810609 - KAHNG DAWON, et al
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0178418 A2 19860423; EP 0178418 A3 19880120; EP 0178418 B1 19901031; DE 3580335 D1 19901206; JP H0312785 B2 19910221; JP S6173346 A 19860415; US 4600445 A 19860715
DOCDB simple family (application)
EP 85110384 A 19850820; DE 3580335 T 19850820; JP 17444585 A 19850809; US 65038984 A 19840914