EP 0178495 A2 19860423 - Method of high contrast positive photoresist developing.
Title (en)
Method of high contrast positive photoresist developing.
Title (de)
Hochkontrastentwicklerverfahren für positive Photolacke.
Title (fr)
Méthode pour le développement à haut contraste pour photoréserves positives.
Publication
Application
Priority
US 66175184 A 19841017
Abstract (en)
57 A positive photoresist aqueous alkaline two-step developing method is provided that gives a high contrast to the photoresist.The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a fluorocarbon or carboxylated surfactant. The incorporation of the fluorocarbon or carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. A double dip method in effecting development of the exposed film is used. The contrast and sensitivity of the photoresist remains essentially unchanged over the life of the bath.The high contrast photoresist provides linewidth control and affords improved processing uniformity in photoresist imaging.
IPC 1-7
IPC 8 full level
G03C 1/72 (2006.01); G03F 7/00 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/38 (2006.01); H01L 21/027 (2006.01); H01L 21/30 (2006.01)
CPC (source: EP KR US)
G03F 7/00 (2013.01 - KR); G03F 7/322 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0178495 A2 19860423; EP 0178495 A3 19860723; EP 0178495 B1 19900321; CA 1261194 A 19890926; CN 85107347 A 19860820; DE 3576742 D1 19900426; JP H0573227 B2 19931013; JP S6197653 A 19860516; KR 860003533 A 19860526; KR 890000804 B1 19890407; US 4613561 A 19860923
DOCDB simple family (application)
EP 85112031 A 19850923; CA 492256 A 19851004; CN 85107347 A 19850930; DE 3576742 T 19850923; JP 23227785 A 19851017; KR 850007629 A 19851016; US 66175184 A 19841017