EP 0178995 A2 19860423 - Aluminium metallized layer formed on silicon wafer.
Title (en)
Aluminium metallized layer formed on silicon wafer.
Title (de)
Aluminium-Metallisierungsschicht, auf einer Siliziumscheibe hergestellt.
Title (fr)
Couche métallisée en aluminium déposée sur une plaquette de silicium.
Publication
Application
Priority
JP 21739884 A 19841018
Abstract (en)
An aluminum metallized layer formed on a silicon wafer, wherein the metallized layer is an aluminum alloy consisting essentially of 0.05% to 5.0% by weight of at least one element selected from the group of zirconium, molybdenum, tungsten, titanium, vanadium, chromium, and phosphor, 1.0% to 3.0% by weight of silicon, and the rest aluminum.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/388 (2006.01); H01L 29/45 (2006.01)
CPC (source: EP KR US)
H01L 21/28512 (2013.01 - EP US); H01L 21/388 (2013.01 - KR); H01L 29/456 (2013.01 - EP US); Y10T 428/12674 (2015.01 - EP US); Y10T 428/12736 (2015.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0178995 A2 19860423; EP 0178995 A3 19880113; JP S6197823 A 19860516; KR 860003651 A 19860528; KR 900000442 B1 19900130; US 4902582 A 19900220
DOCDB simple family (application)
EP 85401995 A 19851015; JP 21739884 A 19841018; KR 850007705 A 19851018; US 30018689 A 19890123