EP 0180020 A3 19871007 - PLASMA ETCHING SYSTEM
Title (en)
PLASMA ETCHING SYSTEM
Publication
Application
Priority
US 66569684 A 19841029
Abstract (en)
[origin: US4581100A] It has been discovered surprisingly that when a plasma is produced by exciting a gas or mixture of gases with microwaves and simultaneously also with a radio frequency electrical discharge, that the resulting plasma is much more highly chemically reactive than a plasma produced instead by only one of the excitations. Such a plasma etches a surface much faster than the sum of the etch rates produced by each of the excitations individually and the etching anisotropy may be controlled by varying the ratio of the applied power of each of the two kinds of simultaneous excitation.
IPC 1-7
IPC 8 full level
H01L 21/302 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H05H 1/46 (2006.01)
CPC (source: EP US)
H01J 37/32357 (2013.01 - EP US); H05H 1/46 (2013.01 - EP US)
Citation (search report)
- [X] GB 2056919 A 19810325 - ONERA (OFF NAT AEROSPATIALE)
- [X] US 4298419 A 19811103 - SUZUKI KEIZO, et al
- [A] US 4401054 A 19830830 - MATSUO SEITARO [JP], et al
- [XD] EP 0140294 B1 19900425
- [XP] JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 3, no. 4, July-August 1985, pages 1025-1034, American Vacuum Society, Woodbury, New York, US; K. SUZUKI et al.: "Radio-frequency biased microwave plasma etching technique: a method to increase SiO2 etch rate"
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
US 4581100 A 19860408; EP 0180020 A2 19860507; EP 0180020 A3 19871007; JP S61107730 A 19860526
DOCDB simple family (application)
US 66569684 A 19841029; EP 85111747 A 19850917; JP 17444685 A 19850809