EP 0180315 A2 19860507 - High breakdown voltage semiconductor device.
Title (en)
High breakdown voltage semiconductor device.
Title (de)
Halbleiteranordnung mit hoher Durchbruchspannung.
Title (fr)
Dispositif semi-conducteur à haute tension de rupture.
Publication
Application
Priority
JP 20010684 A 19840925
Abstract (en)
A semiconductor device formed with a highly doped impurity region (16) of the same conductive type as the semiconductor substrate (10), wherein the highly doped impurity region (16) extends laterally by a prescribed amount opposite a first impurity region (12) with its center opposite the center of the first impurity region (12). The lateral width (T) of the highly doped impurity region (16) is such as to satisfy t1 < T < t1 + 2WO,where t1 is the width of the first impurity region (12) and WO is the separation in the depth direction between the first impurity region (12) and the highly doped impuirity region (16).
IPC 1-7
IPC 8 full level
H01L 29/73 (2006.01); H01L 21/331 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01)
CPC (source: EP KR US)
H01L 29/0619 (2013.01 - EP US); H01L 29/405 (2013.01 - EP US); H01L 29/861 (2013.01 - KR)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0180315 A2 19860507; EP 0180315 A3 19871014; EP 0180315 B1 19910612; DE 3583208 D1 19910718; JP S6178162 A 19860421; KR 860002878 A 19860430; KR 890004960 B1 19891202; US 4746967 A 19880524
DOCDB simple family (application)
EP 85306728 A 19850923; DE 3583208 T 19850923; JP 20010684 A 19840925; KR 850006723 A 19850913; US 4759887 A 19870511