EP 0181391 B1 19890719 - BACK-ILLUMINATED PHOTODIODE WITH WIDE BANDGAP CAP LAYER
Title (en)
BACK-ILLUMINATED PHOTODIODE WITH WIDE BANDGAP CAP LAYER
Publication
Application
Priority
US 60931784 A 19840511
Abstract (en)
[origin: WO8505498A1] In0.53?Ga0.47?As p-i-n photodiodes with room temperature dark currents as low as 0.1 nA at -10 V bias are realized by introducing a wide bandgap (e.g., quaternary InGaAsP) cap layer on the ternary InGaAs.
IPC 1-7
IPC 8 full level
H01L 31/10 (2006.01); H01L 31/105 (2006.01); H01L 31/109 (2006.01)
CPC (source: EP US)
H01L 31/105 (2013.01 - EP US); H01L 31/109 (2013.01 - EP US)
Designated contracting state (EPC)
BE DE FR GB IT NL SE
DOCDB simple family (publication)
WO 8505498 A1 19851205; CA 1225730 A 19870818; DE 3571727 D1 19890824; EP 0181391 A1 19860521; EP 0181391 B1 19890719; JP H0799778 B2 19951025; JP S60244078 A 19851203; US 4608586 A 19860826
DOCDB simple family (application)
US 8500771 W 19850426; CA 480389 A 19850430; DE 3571727 T 19850426; EP 85902736 A 19850426; JP 10035785 A 19850511; US 60931784 A 19840511