EP 0190737 B1 19941109 - Method for Manufacturing a Buried Hetero-Junction Type Semiconductor Laser.
Title (en)
Method for Manufacturing a Buried Hetero-Junction Type Semiconductor Laser.
Title (de)
Verfahren zur Herstellung eines Halbleiterlasers mit versenktem Heteroübergang.
Title (fr)
Procédé de fabrication d'un laser à semiconducteur à hétérojonction à conche enterrée.
Publication
Application
Priority
JP 2298985 A 19850208
Abstract (en)
[origin: EP0190737A2] A semiconductor laser has a semiconductor substrate (1) with a feature (1a) on its surface. The feature (1a), either a projection or a groove, forms a mesa or a mesa groove having relatively sharp edges. Active layers (4) and cladding layers (2, 5) are deposited on this semiconductor substrate (1). The cladding layer (2) deposited directly on the semiconductor substrate (1) has at least one slope (2a) opposite the mesa or mesa groove, on which slope (2a) no active layer is formed during epitaxial growth. The active layer (4) immediately above the cladding layer (2) is prevented from depositing on the slope (2a) of the cladding layer (2) so that no etching process for removing sections of the active layer (4) is necessary. This allows deposition of the active layers (4) and cladding layers (2, 5) on the semiconductor substrate (1) in an uninterrupted sequence of single epitaxial growth steps.
IPC 1-7
IPC 8 full level
H01S 5/00 (2006.01); H01S 5/227 (2006.01)
CPC (source: EP KR US)
H01S 5/227 (2013.01 - EP KR US)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0190737 A2 19860813; EP 0190737 A3 19871021; EP 0190737 B1 19941109; CA 1268846 A 19900508; CA 1268846 C 19900508; DE 3650133 D1 19941215; DE 3650133 T2 19950601; JP 2716693 B2 19980218; JP S61183987 A 19860816; KR 860006851 A 19860915; KR 940006782 B1 19940727; US 4737961 A 19880412
DOCDB simple family (application)
EP 86101457 A 19860205; CA 501123 A 19860205; DE 3650133 T 19860205; JP 2298985 A 19850208; KR 860000734 A 19860204; US 82683786 A 19860206