EP 0191534 B1 19900523 - A METHOD FOR DICING A SEMICONDUCTOR WAFER
Title (en)
A METHOD FOR DICING A SEMICONDUCTOR WAFER
Publication
Application
Priority
- JP 2803085 A 19850214
- JP 2803185 A 19850214
- JP 19654085 A 19850904
- JP 19654185 A 19850904
- JP 19654285 A 19850904
- JP 19654385 A 19850904
- JP 19654485 A 19850904
- JP 19654585 A 19850904
Abstract (en)
[origin: EP0194706A1] A pressure sensitive adhesive film reducible in adhesive force by UV-light comprises a base film permeable to UV-light and a layer of a pressure sensitive adhesive on one side of the base film. The adhesive comprises one elastic polymer selected from apolymer composed of acrylic acid ester copolymersor a saturated copolyester composed of dibasic carboxylic acids and dihydroxy alcohols; 15-200 parts by weight per 100 parts by weight of the elastic polymer of an UV-light polymerizable acrylic acid ester having not less than two acryloyl or methacryloyl groups in the molecule and a molecular weight of not more than 1000; A photopolymerization initiator for inducing the photopolymerization of the UV-light polymerizable acrylic acid ester; The film is suitable as a dicing film in dicing a semiconductor wafer to dices in which the wafer is fixed on the film with a relatively large adhesive force and by UV-light radiation from the other side the adhesive force of the film is reduced that the dice loosely adheres onto the film.
IPC 1-7
IPC 8 full level
C09J 4/06 (2006.01); C09J 7/02 (2006.01); C09J 7/22 (2018.01); C09J 7/38 (2018.01); H01L 21/302 (2006.01); H01L 21/68 (2006.01); H01L 21/78 (2006.01)
CPC (source: EP US)
C09J 4/06 (2013.01 - EP US); C09J 7/22 (2017.12 - EP US); C09J 7/38 (2017.12 - EP US); C09J 7/385 (2017.12 - EP US); H01L 21/6836 (2013.01 - EP US); H01L 21/78 (2013.01 - EP US); C09J 2203/326 (2013.01 - EP US); C09J 2423/001 (2013.01 - EP US); C09J 2427/006 (2013.01 - EP US); C09J 2433/00 (2013.01 - EP US); C09J 2433/001 (2013.01 - EP US); C09J 2467/001 (2013.01 - EP US); H01L 2221/68327 (2013.01 - EP US); Y10S 156/93 (2013.01 - EP US); Y10S 428/913 (2013.01 - EP US); Y10T 156/1052 (2015.01 - EP US); Y10T 156/1082 (2015.01 - EP US); Y10T 156/11 (2015.01 - EP US); Y10T 428/2809 (2015.01 - EP US); Y10T 428/2883 (2015.01 - EP US); Y10T 428/2887 (2015.01 - EP US); Y10T 428/2891 (2015.01 - EP US); Y10T 428/3158 (2015.04 - EP US); Y10T 428/31928 (2015.04 - EP US)
Citation (examination)
EP 0194706 A1 19860917 - BANDO CHEMICAL IND [JP]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0194706 A1 19860917; EP 0194706 B1 19890823; CA 1252579 A 19890411; CA 1272542 A 19900807; DE 3665191 D1 19890928; DE 3671577 D1 19900628; EP 0191534 A1 19860820; EP 0191534 B1 19900523; US 4720317 A 19880119; US 4818621 A 19890404; US 4913960 A 19900403
DOCDB simple family (application)
EP 86200196 A 19860211; CA 501750 A 19860213; CA 501753 A 19860213; DE 3665191 T 19860211; DE 3671577 T 19860211; EP 86200195 A 19860211; US 28708988 A 19881221; US 82981486 A 19860214; US 82981886 A 19860214