Global Patent Index - EP 0194265 B1

EP 0194265 B1 19900221 - INFRARED OPTOELECTRONIC COMPONENT

Title (en)

INFRARED OPTOELECTRONIC COMPONENT

Publication

EP 0194265 B1 19900221 (DE)

Application

EP 85903198 A 19850709

Priority

CH 346084 A 19840710

Abstract (en)

[origin: WO8600756A1] An epitaxial layer (2) of a group IIa-fluoride and an epitaxial layer (3) of a narrow gap semiconductor, e.g. a lead chalcogenide, are grown successively onto a semiconductor substrate (1), e.g. silicon. One or more infrared sensors (4) are integrated into the narrow gap semiconductor layer (3). The semiconducting substrate (1) may contain integrated circuit means (5) for processing of the electrical signals of the sensors (4). The lattice constants of the fluoride layer (2) at its interfaces have values between or near those of the substrate (1) and narrow gap semiconductor layer (3), respectively. The fluoride layer (2) is composed of CaxSryBazCd1-x-y-zF2, where 0<=x, y, z<=1, and its composition and therefore lattice constant may vary across its thickness for improved lattice match at the interfaces to the narrow gap semiconductor layer (3) and to the substrate (1).

IPC 1-7

H01L 29/24; H01L 21/363; H01L 21/365; H01L 31/18; C30B 23/02; C30B 29/12

IPC 8 full level

H01L 21/20 (2006.01); H01L 21/314 (2006.01); H01L 21/365 (2006.01); H01L 21/84 (2006.01); H01L 27/14 (2006.01); H01L 27/144 (2006.01); H01L 27/146 (2006.01); H01L 29/24 (2006.01); H01L 31/0392 (2006.01); H01L 31/10 (2006.01)

CPC (source: EP US)

H01L 21/02107 (2013.01 - EP); H01L 21/0237 (2013.01 - EP US); H01L 21/02488 (2013.01 - EP US); H01L 21/02568 (2013.01 - EP US); H01L 21/314 (2016.02 - US); H01L 27/1443 (2013.01 - EP US); H01L 29/245 (2013.01 - EP US); H01L 31/0392 (2013.01 - EP US); H01L 31/03925 (2013.01 - EP US); Y02E 10/50 (2013.01 - US)

Citation (examination)

  • Japanese Journal of Applied Physics, Band 22, Nr. 10, Oktober 1983, Tokio (JP); T. ASANO et al.: "Heteroepitaxial growth of group IIa fluoride films on Si substrates", Seiten 1474-1481.
  • Japanese Journal of Applied Physics, Band 21, Nr. 10, Oktober 1982, Tokio (JP); T. ASANO et al.: "Epitaxial growth of GE Films onto CaF2/Si structures", Seiten L630-L632.
  • Japanese Journal of Applied Physics, Band 22, Supplement Nr. 22-1, 1982, Tokio (JP); H. ISHIWARA et al.: "Latticematched epitaxial growth of semiconductor films onto insulator (mixed fluoride)/Si structures", Seiten 201-204.

Designated contracting state (EPC)

AT BE CH DE FR GB IT LI NL SE

DOCDB simple family (publication)

WO 8600756 A1 19860130; DE 3576099 D1 19900329; EP 0194265 A1 19860917; EP 0194265 B1 19900221; JP H065722 B2 19940119; JP S61502921 A 19861211; US 4743949 A 19880510

DOCDB simple family (application)

CH 8500110 W 19850709; DE 3576099 T 19850709; EP 85903198 A 19850709; JP 50290385 A 19850709; US 85574886 A 19860306