EP 0207528 A3 19880323 - PHOTOMASK AND PRODUCTION PROCESS
Title (en)
PHOTOMASK AND PRODUCTION PROCESS
Publication
Application
Priority
DE 3524176 A 19850705
Abstract (en)
[origin: US4764432A] A photomask useful as stencil or reticle comprises a thin layer, which includes regions of different optical transmissivity for light radiation of a predetermined spectral range. The layer consists of silicon or any other suitable semiconductor material, and the regions of different transmissivity consist essentially of the monocrystalline or amorphous phase of the mask material. The photomask may be manufactured by irradiating a thin layer of monocrystalline silicon with a focussed ion beam to convert the silicon within the irradiated regions into the amorphous phase.
IPC 1-7
IPC 8 full level
G03F 1/00 (2012.01); G03F 1/54 (2012.01); G03F 1/78 (2012.01); H01L 21/027 (2006.01); H01L 21/30 (2006.01)
CPC (source: EP US)
G03F 1/50 (2013.01 - EP US); G03F 1/54 (2013.01 - EP US); G03F 1/78 (2013.01 - EP US); Y10T 428/24802 (2015.01 - EP US); Y10T 428/24926 (2015.01 - EP US); Y10T 428/24942 (2015.01 - EP US)
Citation (search report)
- [X] GB 1217169 A 19701231 - GLAVERBEL [BE]
- [X] IBM TECHNICAL DISCLOSURE, Band 12, Nr. 2, Juli 1969, Seite 332, New York, US; M.H. BRODSKY: "Image recording on amorphous films"
- [Y] CHEMICAL ABSTRACTS, Band 96, Nr 14, April 1982, Seite 640, Zusammenfassung Nr. 113548k, Columbus, Ohio, US; & JP-A-81 110 939 (CHO LSI GIJUTSU KENKYU KUMIAI) 02-09-1981
- [X] CHEMICAL ABSTRACTS, Band 47, Nr. 22, 25. November 1953, Zusammenfassung Nr. 12068B, Columbus, Ohio, US; P. SELENYI: "Production of photographic images on selenium by crystallization under the influence of light", & ACTA PHYS. ACAD. SCI. HUNG. 2, 129-39(1952)
- [X] IBM TECHNICAL DISCLOSURE BULLTIN, Band 16, Nr. 3, August 1973, Seite 869, New York, US; P. CHAUDHARI et al.: "Electron-beam addressable memory by solid-state transformation"
- [X] IBM TECHNICAL DISCLOSURE BULLETIN, Band 14, Nr. 10 MÄrz 1972, Seiten 3133-3134, New York, US; D. AST et al.: "Producing microscopic patterns on chalcogenide films"
- [X] PROCEEDING OF THE SIPD, Band 13, Nr. 24, 1972, Seiten 188-192, New York, US; S.R. OVSHINSKY et al.: "Reversible high speed high resolution imaging in amorphous semiconductors"
- [X] PATENT ABSTRACTS OF JAPAN, Band 4, Nr. 168 (P-37) [650], 20. November 1980; & JP-A-55 113 047 (NIPPON DENKI K.K.) 01-09-1980
- [A] PATENT ABSTRACTS OF JAPAN, Band 5, Nr. 30 (E-47) [702], 24. Februar 1981; & JP-A-55 158 635 (CHO LSI GIJUTSU KENKYU KUMIAI) 10-12-1980
- [A] PATENT ABSTRACTS OF JAPAN, Band 7, Nr. 67 (P-184) [1212], 19. März 1983; & JP-A-57 212 447 (SANYO DENKI K.K.) 27-12-1982
Designated contracting state (EPC)
AT BE CH DE FR GB IT LI NL SE
DOCDB simple family (publication)
EP 0207528 A2 19870107; EP 0207528 A3 19880323; EP 0207528 B1 19920610; AT E77157 T1 19920615; DE 3524176 A1 19870115; DE 3685613 D1 19920716; JP H0731395 B2 19950410; JP S62115166 A 19870526; US 4764432 A 19880816
DOCDB simple family (application)
EP 86109146 A 19860704; AT 86109146 T 19860704; DE 3524176 A 19850705; DE 3685613 T 19860704; JP 15634386 A 19860704; US 88080086 A 19860701