EP 0209065 B1 19901107 - METHOD FOR SUPPLYING AN OXYGEN GAS CONTAINING STEAM FOR THE SURFACE TREATMENT OF SEMICONDUCTOR WAFERS
Title (en)
METHOD FOR SUPPLYING AN OXYGEN GAS CONTAINING STEAM FOR THE SURFACE TREATMENT OF SEMICONDUCTOR WAFERS
Publication
Application
Priority
JP 15670885 A 19850715
Abstract (en)
[origin: EP0209065A2] Apparatus for supplying oxygen gas containing steam to a semiconductor wafer to be treated comprises a combustion chamber (II) and a hydrogen chamber (13) divided by a hydrogen gas permeable membrane (15) which is made of oxidation catalyst and defines a part (14) of the hydrogen chamber which projects into the combustion chamber. Oxygen gas is fed into the combustion chamber through an inlet tube 12 and hydrogen is fed through the hydrogen chamber from an inlet tube 16 to an outlet tube 19, so that hydrogen gas diffuses through the membrane and reacts catalytically with the oxygen gas in the combustion chamber to form steam. Any necessary heat is supplied by a heater 20 disposed around the combustion chamber. The steam-containing oxygen gas is fed to the semiconductor wafer (not shown) in the direction of the arrow (21).
IPC 1-7
IPC 8 full level
C01B 5/00 (2006.01); C23C 8/16 (2006.01); F22B 1/00 (2006.01); H01L 21/31 (2006.01)
CPC (source: EP US)
C01B 5/00 (2013.01 - EP US); C23C 8/16 (2013.01 - EP US); F22B 1/00 (2013.01 - EP US); F22B 1/003 (2013.01 - EP US)
Citation (examination)
- EP 0069222 A2 19830112 - KERNFORSCHUNGSANLAGE JUELICH [DE]
- EP 0140073 A2 19850508 - KERNFORSCHUNGSANLAGE JUELICH [DE]
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0209065 A2 19870121; EP 0209065 A3 19880113; EP 0209065 B1 19901107; DE 3675444 D1 19901213; JP S62104038 A 19870514; US 4693208 A 19870915
DOCDB simple family (application)
EP 86109328 A 19860708; DE 3675444 T 19860708; JP 15670885 A 19850715; US 88569786 A 19860715