EP 0209949 A2 19870128 - Method for forming a transistor, and transistor.
Title (en)
Method for forming a transistor, and transistor.
Title (de)
Verfahren zur Herstellung eines Transistors und Transistor.
Title (fr)
Méthode de fabrication d'un transistor et transistor.
Publication
Application
Priority
US 75758285 A 19850722
Abstract (en)
A transistor is provided which includes an electrical contact (122) formed in a V-shaped groove (118). Because of the unique shape of the electrical contact, a smaller surface area is required for its formation thus rendering it possible to construct a transistor having a smaller surface area. The groove is formed by anisotropically etching an expitaxial layer (102) on a semi-conductor substrate (100) using, for example KOH.
IPC 1-7
IPC 8 full level
H01L 21/336 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 29/41741 (2013.01 - EP US); H01L 29/66674 (2013.01 - EP US); H01L 29/7801 (2013.01 - EP US); H01L 29/7802 (2013.01 - EP US); H01L 29/7816 (2013.01 - EP US); H01L 29/41766 (2013.01 - EP US)
Designated contracting state (EPC)
BE DE FR GB IT NL
DOCDB simple family (publication)
EP 0209949 A2 19870128; JP H0744272 B2 19950515; JP S6223171 A 19870131; US 4682405 A 19870728
DOCDB simple family (application)
EP 86201246 A 19860716; JP 6557186 A 19860324; US 75758285 A 19850722