Global Patent Index - EP 0216750 B1

EP 0216750 B1 19900509 - ION BEAM APPARATUS AND PROCESS FOR REALIZING MODIFICATIONS, ESPECIALLY CORRECTIONS, ON SUBSTRATES, USING AN ION BEAM APPARATUS

Title (en)

ION BEAM APPARATUS AND PROCESS FOR REALIZING MODIFICATIONS, ESPECIALLY CORRECTIONS, ON SUBSTRATES, USING AN ION BEAM APPARATUS

Publication

EP 0216750 B1 19900509 (DE)

Application

EP 86890256 A 19860910

Priority

AT 266185 A 19850911

Abstract (en)

[origin: WO8701865A1] An ion beam apparatus is used to detect and repair under constant control the defects of a substrate. To that effect, the ion beam apparatus includes a mask (4) arranged in the path of the rays after the ion source (1) and presenting a perforation (5), preferably a round opening. A controllable lens (6) is provided between the ion source (1) and the mask (4) to modify the angle epsilon with which the ion beam leaves the ion source (Fig. 1)

IPC 1-7

G03F 1/00; H01J 37/30

IPC 8 full level

G03F 1/74 (2012.01); H01J 37/30 (2006.01); H01L 21/027 (2006.01)

CPC (source: EP US)

G03F 1/74 (2013.01 - EP US); H01J 37/3005 (2013.01 - EP US); H01J 37/3007 (2013.01 - EP US)

Designated contracting state (EPC)

AT BE DE FR GB IT NL SE

DOCDB simple family (publication)

EP 0216750 A1 19870401; EP 0216750 B1 19900509; AT 386297 B 19880725; AT A266185 A 19871215; AT E52635 T1 19900515; DE 3671131 D1 19900613; JP H0619546 B2 19940316; JP S63500899 A 19880331; US 4924104 A 19900508; WO 8701865 A1 19870326

DOCDB simple family (application)

EP 86890256 A 19860910; AT 266185 A 19850911; AT 8600053 W 19860910; AT 86890256 T 19860910; DE 3671131 T 19860910; JP 50485586 A 19860910; US 24478688 A 19880909