EP 0217225 B1 19910828 - TRIMMABLE CIRCUIT GENERATING A TEMPERATURE-DEPENDENT REFERENCE VOLTAGE

Title (en)

TRIMMABLE CIRCUIT GENERATING A TEMPERATURE-DEPENDENT REFERENCE VOLTAGE

Publication

EP 0217225 B1 19910828 (DE)

Application

EP 86112803 A 19860916

Priority

DE 3534891 A 19850930

Abstract (en)

[origin: US4751454A] Circuit for generating a temperature-independent reference voltage includes transistors forming current sources, and a band gap circuit having bipolar transistors and being supplied by the current sources, the ratio of the emitter currents of the bipolar transistors being adjustable. The current sources may further include a first current source and a second current source parallel with the first current source.

IPC 1-7

G05F 3/00; G05F 3/30

IPC 8 full level

G05F 3/00 (2006.01); G05F 3/30 (2006.01)

CPC (source: EP US)

G05F 3/30 (2013.01 - EP US); Y10S 323/907 (2013.01 - EP US)

Citation (examination)

EP 0075221 A2 19830330 - SIEMENS AG [DE]
U. Tietze, Ch.Schenk, "Halbleiter - Schaltungstechnik", Springer-Verlag, 6. Auflage, Berlin, Heidelberg, Tokio, 1983, Seiten 532-537
IEEE Journal of Solid-State Circuits, Band SC-13; Heft 6, 1978, Seiten 873-881, IEEE, New York, US; D.M. Monticelli: "A Versatile Monolithic IC Building - Block for Light-Sensing Applications;

Designated contracting state (EPC)

AT BE CH DE FR GB IT LI LU NL SE

DOCDB simple family (publication)

EP 0217225 A1 19870408; EP 0217225 B1 19910828; AT E66756 T1 19910915; DE 3681107 D1 19911002; JP S6279515 A 19870411; US 4751454 A 19880614

DOCDB simple family (application)

EP 86112803 A 19860916; AT 86112803 T 19860916; DE 3681107 T 19860916; JP 23108186 A 19860929; US 91341386 A 19860929