EP 0219827 A2 19870429 - Improved process for forming low sheet resistance metal silicide layers on semiconductor substrates.
Title (en)
Improved process for forming low sheet resistance metal silicide layers on semiconductor substrates.
Title (de)
Herstellungsverfahren von Metallsilicidschichten von niedrigem Widerstand auf Halbleitersubstraten.
Title (fr)
Procédé de formation de couches de siliciures métalliques à basse résistance sur des substrats semi-conducteurs.
Publication
Application
Priority
US 79124185 A 19851025
Abstract (en)
A process is disclosed for forming a patterned silicide layer overlying a processed semiconductor substrate (10), the substrate having insulator regions (40, 50) and insulator-free regions (20, 30, 70) on an exposed surface thereof. The process comprises the following steps: co-depositing silicon and a refractory metal such as titanium, Zirconium, tungsten, molybdenum, cobalt, vanadium, or nickel,on the exposed surface of the substrate to form a metal rich silicide (80) thereon; annealing the metal rich silicide such that it reacts with the underlying insulator-free regions to form a reacted silicide (90, 100, 110) without reacting with the underlying insulator regions; and exposing the substrate to a wet etchant which removes the unreacted portions of the metal rich silicide without removing the reacted silicide. Depending on the refractory metal used, the etchant is either a concentrated basic peroxide etchant comprising ammonium hydroxide, or a concentrated acid peroxide etchant comprising hydrochloric acid or sulfuric acid.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/52 (2006.01); H01L 27/088 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/28052 (2013.01 - EP US); H01L 21/28518 (2013.01 - EP US); H01L 21/32134 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0219827 A2 19870429; EP 0219827 A3 19890111; EP 0219827 B1 19920422; DE 3684986 D1 19920527; JP 2565665 B2 19961218; JP H07153717 A 19950616; JP H079904 B2 19950201; JP S62101049 A 19870511; US 4663191 A 19870505
DOCDB simple family (application)
EP 86114398 A 19861017; DE 3684986 T 19861017; JP 19938394 A 19940824; JP 21422886 A 19860912; US 79124185 A 19851025