EP 0220174 A1 19870506 - CONTINUOUSLY PULLED SINGLE CRYSTAL SILICON INGOTS.
Title (en)
CONTINUOUSLY PULLED SINGLE CRYSTAL SILICON INGOTS.
Title (de)
KONTINUIERLICH GEZOGENE SILIZIUMEINKRISTALLBLÖCKE.
Title (fr)
LINGOTS DE SILICIUM MONOCRISTALLIN OBTENUS PAR UN PROCEDE A TRACTION CONTINUE.
Publication
Application
Priority
US 8500924 W 19850517
Abstract (en)
[origin: WO8606764A1] Method for producing single crystal ingots continuously by forming a molten body of silicon from two or more feedstocks of silicon, one feedstock containing a predetermined level of dopant, the silicon feedstocks being in the form of solid spheroidal particles of a generally uniform diameter range, continuously drawing a single crystal ingot of doped silicon from said molten body of silicon, said ingot being characterized in that the concentration of dopant is uniform along the length of the ingot, while continuously feeding said feedstocks into said molten body of silicon to thereby maintain constant melt volume and the concentration of dopant uniform throughout the body during the drawing of the single crystal therefrom.
Abstract (fr)
Procédé de production en continu de lingots monocristallins consistant à former un corps en fusion de silicium à partir d'une ou plusieurs matières premières à base de silicium, une matière contenant un niveau prédéterminé de dopant, les matières premières à base de silicium ayant la forme de particules solides sphéroïdales d'un diamètre généralement filiforme, à étirer en continu un lingot monocristallin de silicium dopé à partir dudit corps de silicium en fusion, le lingot se caractérisant par le fait que la concentration du dopant est uniforme sur toute la longueur du lingot, tout en alimentant en matières premières le corps de silicium en fusion afin de maintenir constant le volume du corps en fusion et de maintenir uniforme la concentration du dopant dans tout le corps pendant l'étirage du monocristal.
IPC 1-7
IPC 8 full level
H01L 21/18 (2006.01); C30B 15/04 (2006.01); C30B 29/06 (2006.01)
CPC (source: EP)
C30B 15/04 (2013.01)
Designated contracting state (EPC)
AT BE CH DE FR GB IT LI LU NL SE
DOCDB simple family (publication)
WO 8606764 A1 19861120; EP 0220174 A1 19870506; EP 0220174 A4 19890626; JP S62502793 A 19871112
DOCDB simple family (application)
US 8500924 W 19850517; EP 85902833 A 19850517; JP 50240385 A 19850517