EP 0228668 B1 19920311 - LOW TEMPERATURE SINTERED CERAMIC CAPACITOR WITH A TEMPERATURE COMPENSATING CAPABILITY, AND METHOD OF MANUFACTURE
Title (en)
LOW TEMPERATURE SINTERED CERAMIC CAPACITOR WITH A TEMPERATURE COMPENSATING CAPABILITY, AND METHOD OF MANUFACTURE
Publication
Application
Priority
JP 29800385 A 19851230
Abstract (en)
[origin: EP0228668A2] A temperature compensating capacitor of monolithic or multilayered configuration comprising a dielectric ceramic body and at least two electrodes buried therein. The ceramic body is composed of a major ingredient expressed by the formula, {(Sr<sub>1-x-y</sub>Ca<sub>x</sub>M<sub>y</sub>)O}<sub>k</sub> (Ti<sub>1-z</sub>Zr<sub>z</sub>)O<sub>2</sub>, where M is at least either of magnesium and zinc, and where x, y, k and z are numerals in the ranges of zero to 0.995 inclusive, 0.005 to 0.100 includive, 1.00 to 1.04 inclusive, and 0.005 to 0.100 inclusive, respectively. To this major ingredient is added a minor proportion of a mixture of lithium oxide, silicon dioxide, and one or more metal oxides selected from among barium oxide, magnesium oxide, zinc oxide, strontium oxide and calcium oxide. For the fabrication of capacitors the mixture of the above major ingredient and additives in finely divided form are formed into moldings of desired shape and size, each with at least two electrodes buried therein. The moldings and electrodes are cosintered in a reductive or neutral atmosphere and then are reheated at a lower temperature in an oxidative atmosphere. The cosintering temperature can be so low that nickel or like base metal can be employed as the electrode material.
IPC 1-7
IPC 8 full level
C04B 35/47 (2006.01); C04B 35/49 (2006.01); H01B 3/12 (2006.01); H01G 4/12 (2006.01); H01G 4/30 (2006.01)
CPC (source: EP KR US)
C04B 35/47 (2013.01 - EP US); C04B 35/49 (2013.01 - EP US); H01G 4/12 (2013.01 - KR); H01G 4/1245 (2013.01 - EP US); H01G 4/30 (2013.01 - KR)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0228668 A2 19870715; EP 0228668 A3 19890607; EP 0228668 B1 19920311; DE 3684274 D1 19920416; JP H0518203 B2 19930311; JP S62157606 A 19870713; KR 870006599 A 19870713; KR 900002518 B1 19900416; US 4700267 A 19871013
DOCDB simple family (application)
EP 86117651 A 19861218; DE 3684274 T 19861218; JP 29800385 A 19851230; KR 860011262 A 19861226; US 94533486 A 19861222