EP 0235827 A3 19891227 - THERMAL PRINT HEAD CONTAINING SUPER-THIN POLYCRYSTALLINE SILICON FILM TRANSISTOR
Title (en)
THERMAL PRINT HEAD CONTAINING SUPER-THIN POLYCRYSTALLINE SILICON FILM TRANSISTOR
Publication
Application
Priority
- JP 4745886 A 19860306
- JP 9253886 A 19860422
Abstract (en)
[origin: EP0235827A2] Disclosed is herein a thermal print head containing super-thin polycrystalline silicon film transistors, comprising: heating resistors (3B, 2l) formed in a thin polycrystalline silicon layer (3) formed over a substrate (l); and a driving circuit comprising super-thin film transistors (4, 5, 6) each having a thin active layer (3c), formed in the polycrystalline silicon layer (3).
IPC 1-7
IPC 8 full level
B41J 2/335 (2006.01)
CPC (source: EP KR)
B41J 2/315 (2013.01 - KR); B41J 2/33515 (2013.01 - EP); B41J 2/33545 (2013.01 - EP); B41J 2/3355 (2013.01 - EP); B41J 2/3357 (2013.01 - EP)
Citation (search report)
- [A] US 3852563 A 19741203 - BOHORQUEZ J, et al
- [A] US 4472875 A 19840925 - CHRISTIAN RAYMOND R [US], et al
- [A] PATENT ABSTRACTS OF JAPAN, vol. 7, no. 59 (M-199)(1204) 11 March 1983; & JP-A-57 203 573 (FUJI XEROX K.K.) 13-12-1982
- [AD] PATENT ABSTRACTS OF JAPAN, vol. 7, no. 275 (M-261)(1420) 8 December 1983; & JP-A-58 153 672 (NIPPON DENSHIN DENWA KOSHA) 12-09-1983
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0235827 A2 19870909; EP 0235827 A3 19891227; EP 0235827 B1 19930811; CA 1283693 C 19910430; DE 3786935 D1 19930916; DE 3786935 T2 19940120; KR 870008706 A 19871020
DOCDB simple family (application)
EP 87103260 A 19870306; CA 531211 A 19870305; DE 3786935 T 19870306; KR 870001956 A 19870305