EP 0248438 A3 19890510 - APPARATUS COMPRISING A MONOLITHIC NONLINEAR FABRY-PEROT ETALON,AND METHOD FOR PRODUCING SAME
Title (en)
APPARATUS COMPRISING A MONOLITHIC NONLINEAR FABRY-PEROT ETALON,AND METHOD FOR PRODUCING SAME
Publication
Application
Priority
US 87084286 A 19860605
Abstract (en)
[origin: EP0248438A2] The inventive method for forming monolithic nonlinear Fabry-Perot etalons comprising depositing on an appropriate substrate (30), e.g., a GaAs wafer, a first multilayer mirror (34), depositing on the first mirror a spacer (33) typically comprising optically nonlinear material, and depositing a second multilayer mirror (35) onto the spacer. Typically, at least one of the mirrors is an active mirror comprising optically nonlinear material. Deposition can be by a known process, e.g., by MBE or MOCVD. Since, inter alia, the method comprises no critical etching steps it can be used to produce high finesse etalons that have uniform properties over relatively large areas. The inventive method can be adapted to the manufacture of transmissive etalons. It can also be used to produce arrays of optically isolated etalons. Devices comprising nonlinear etalons manufactured by the inventive method can be incorporated, for instance, into optical data processing apparatus, or into optical communications apparatus.
IPC 1-7
IPC 8 full level
G02F 1/21 (2006.01); G02F 1/35 (2006.01); G02F 3/02 (2006.01)
CPC (source: EP US)
G02F 1/218 (2013.01 - EP US); G02F 3/024 (2013.01 - EP US)
Citation (search report)
- [X] APPLIED PHYSICS LETTERS, vol. 45, no. 10, November 1984, pages 1031-1033, American Institute of Physics, New York, US; G.R. OLBRIGHT et al.: "Microsecond room-temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers"
- [A] APPLIED PHYSICS LETTERS, vol. 48, no. 2, 13th January 1986, pages 145-147, American Institute of Physics, New York, US; T. VENKATESAN et al.: "Fabrication of arrays of GaAs optical bistable devices"
- [A] APPLIED PHYSICS LETTERS, vol. 48, no. 20, 19th May 1986, pages 1342-1344, American Insitute of Physics, Woodbury, New York, US; J.L. JEWELL et al.: "Parallel operation and crosstalk measurements in GaAs étalon optical logic devices"
- [A] APPLIED PHYSICS LETTERS, vol. 45, no. 10, 15th November 1984, pages 1028-1030, American Institute of Physics, New York, US; R.L. THORNTON et al.: "High reflectivity GaAs-AlGaAs mirrors fabricated by metalorganic chemical vapor deposition"
- [A] JOURNAL OF THE OPTICAL OF AMERICA B. OPTICAL PHYSICS, vol. 3, no. 2, February 1986, pages 351-362, Optical Society of America, Woodbury, New York, US; B.S. WHERRETT et al.: "Optically bistable interference filters: optimization considerations"
- [A] APPLIED PHYSICS LETTERS, vol. 48, no. 12, 24th March 1986, pages 754-756, American Institute of Physics, Woodbury, New York, US; Y.H. LEE et al.: "Streak-camera observation of 200-ps recovery of an optical gate in a windowless GaAs étalon array"
- [A] OPTICAL ENGINEERING, vol. 24, no. 1, January/February 1985, pages 68-73; N. PEYGHAMBARIAN et al.: "Optical bisability for optical signal processing and computing"
- [AD] MATERIALS LETTERS, vol. 1, no. 5,6, April 1983, pages 148-151; J.L. JEWELL et al.: "Fabrication of GaAs bistable optical devices"
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0248438 A2 19871209; EP 0248438 A3 19890510; EP 0248438 B1 19930324; CA 1293794 C 19911231; DE 3784969 D1 19930429; DE 3784969 T2 19930812; JP S6311915 A 19880119; US 4756606 A 19880712
DOCDB simple family (application)
EP 87108133 A 19870604; CA 538778 A 19870603; DE 3784969 T 19870604; JP 14013487 A 19870605; US 87084286 A 19860605