EP 0259878 A3 19900124 - ELECTRON EMISSION ELEMENT
Title (en)
ELECTRON EMISSION ELEMENT
Publication
Application
Priority
- JP 1819187 A 19870130
- JP 21282186 A 19860911
- JP 23450186 A 19861003
- JP 28424086 A 19861201
- JP 29768386 A 19861216
Abstract (en)
[origin: EP0259878A2] An electron emission element comprises a P-type semiconductor substrate (1) and electrodes (2, 3) formed on both ends of the semiconductor substrate. A voltage is applied between said electrodes. The P-type semiconductor substrate is irradiated with light to emit the electrons, generated in the P-type semiconductor substrate by photoexcitation, from an electron emitting face (4) at an end of the P-type semiconductor substrate.
IPC 1-7
IPC 8 full level
H01J 1/308 (2006.01); H01J 1/34 (2006.01)
CPC (source: EP)
H01J 1/308 (2013.01); H01J 1/34 (2013.01); H01J 2201/3423 (2013.01)
Citation (search report)
- [Y] US 3872489 A 19750318 - HAGENLOCHER ARNO K
- [Y] EP 0041119 A1 19811209 - IBM [US]
- [Y] FR 1460237 A 19661125 - MATSUSHITA ELECTRIC IND CO LTD
- [A] US 3624273 A 19711130 - GALE ALFRED J
- [A] US 3119947 A 19640128 - ADOLF GOETZBERGER
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0259878 A2 19880316; EP 0259878 A3 19900124; EP 0259878 B1 19970514; DE 3752064 D1 19970619; DE 3752064 T2 19971106
DOCDB simple family (application)
EP 87113260 A 19870910; DE 3752064 T 19870910