Global Patent Index - EP 0283667 A3

EP 0283667 A3 19890118 - METHOD AND APPARATUS OF TREATING PHOTORESISTS

Title (en)

METHOD AND APPARATUS OF TREATING PHOTORESISTS

Publication

EP 0283667 A3 19890118 (EN)

Application

EP 88101172 A 19880127

Priority

JP 6789087 A 19870324

Abstract (en)

[origin: EP0283667A2] Ultraviolet radiation process applies to manufacture to semiconductor devices in order to enhance the thermal stability of the developed positive photoresist film on semiconductor's wafers. A method, in ultraviolet radiation process, and an apparatus enabling the high-speed and effective treatment of the positive photoresist employing ultraviolet irradiation by preventing the deformation of the positive photoresist which is caused by the light radiated from the microwave-excited electrodeless discharge lamp. These method and apparatus employ ultraviolet irradiation, in which ultraviolet rays are applied to the developed positive photoresist image placed under lower or pressure than 1 atmospheric pressure, using a means to intercept or reduce selectively all or part of the wavelengths in the spectral response region of the positive photoresist out of radiant lights obtained from the microwave-excited electrodeless discharge lamp.

IPC 1-7

G03F 7/26

IPC 8 full level

G03F 7/40 (2006.01); B01J 19/12 (2006.01); G03F 7/20 (2006.01); H01L 21/027 (2006.01)

CPC (source: EP US)

B01J 19/124 (2013.01 - EP US); G03F 7/2024 (2013.01 - EP US)

Citation (search report)

  • [X] EP 0195106 A1 19860924 - IBM DEUTSCHLAND [DE], et al
  • [Y] US 4548688 A 19851022 - MATTHEWS JOHN C [US]
  • [AD] DE 3336473 A1 19840503 - FUSION SYSTEMS CORP [US]
  • [XP] EP 0239669 A2 19871007 - USHIO ELECTRIC INC [JP]
  • [XP] EP 0282704 A2 19880921 - USHIO ELECTRIC INC [JP]
  • [X] JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 129, no. 6, June 1982, pages 1379-1381, Manchester, N.H., US; R. ALLEN et al.: "Deep U.V. hardening of positive photoresist patterns"
  • [X] JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 128, no. 12, December 1981, pages 2645-2647, Manchester, N.H., US; H. HIRAOKA et al.: "High temperature flow resistance of micron sized images in AZ resists"
  • [X] SOLID STATE TECHNOLOGY, vol. 27, no. 7, July 1984, pages 45-46, Port Washington, N.Y., US; "Photoresist stabilization system"

Designated contracting state (EPC)

DE GB NL

DOCDB simple family (publication)

EP 0283667 A2 19880928; EP 0283667 A3 19890118; EP 0283667 B1 19910116; DE 3861528 D1 19910221; JP S63234529 A 19880929; US 4882263 A 19891121

DOCDB simple family (application)

EP 88101172 A 19880127; DE 3861528 T 19880127; JP 6789087 A 19870324; US 14692788 A 19880122