EP 0290692 B1 19930908 - APPARATUS FOR HEATING SEMICONDUCTOR WAFERS
Title (en)
APPARATUS FOR HEATING SEMICONDUCTOR WAFERS
Publication
Application
Priority
EP 87304297 A 19870514
Abstract (en)
[origin: EP0290692A1] Radiation heating of a semiconductor wafer employs first and second pluralities (30; 32) of spaced and skewed elongate parallel lamps (1 to 10: 11 to 20). Lamps in each plurality are grouped beginning with the innermost lamps and extending to the outermost lamps. Each group of lamps in one plurality of lamps are interconnected with a group of lamps in the other plurality of lamps whereby the interconnected groups of lamps are simultaneously and equally energized. Lamp voltage is modulated in accordance with a preestablished table for each size of wafer and temperature cycle. Alternatively, temperature sensors (38) can be employed to provide feedback to a computer controlled modulator. The lamps in the different groups can be selected to have different steady state power intensities for a given voltage thereby to establish a desired temperature gradient.
IPC 1-7
IPC 8 full level
F27B 5/14 (2006.01); F27D 99/00 (2010.01); H05B 3/00 (2006.01); F27D 19/00 (2006.01)
CPC (source: EP)
F27B 5/14 (2013.01); F27D 99/0006 (2013.01); H05B 3/0047 (2013.01); F27D 2019/0003 (2013.01); F27D 2019/0093 (2013.01)
Designated contracting state (EPC)
DE FR GB NL
DOCDB simple family (publication)
EP 0290692 A1 19881117; EP 0290692 B1 19930908; DE 3787367 D1 19931014; DE 3787367 T2 19940414
DOCDB simple family (application)
EP 87304297 A 19870514; DE 3787367 T 19870514