Global Patent Index - EP 0299027 B1

EP 0299027 B1 19911002 - CREEP-RESISTANT ALLOY OF REFRACTORY METALS AND ITS PRODUCTION PROCESS

Title (en)

CREEP-RESISTANT ALLOY OF REFRACTORY METALS AND ITS PRODUCTION PROCESS

Publication

EP 0299027 B1 19911002 (DE)

Application

EP 88901002 A 19880126

Priority

AT 15887 A 19870128

Abstract (en)

[origin: WO8805830A1] A creep-resistant sintered alloy having a tiered structural arrangement of one or several refractory metals Mo, W, Nb, Ta, V, Cr containing certain doping agents, as well as a process for producing the same. The special doping agents are compounds and/or mixed phases of these compounds selected from the group of oxides, nitrides, carbides, borides, silicates or aluminates having a melting point higher than 1500 DEG C. The size of their grains is </= 1.5 mu m, their proportion in the alloy is comprised between 0.005 and 10 weight %. Unlike in the known state of the art, the use of potassium as doping agent is avoided in this alloy. A good reproducible consolidation and in particular high densities during sintering can thus be obtained. Furthermore, this alloy has better ambient temperature, heat and creep resistance properties than known alloys of refractory metals with a tiered structural arrangement.

IPC 1-7

B22F 3/24; C22C 32/00; C22F 1/18

IPC 8 full level

B22F 3/24 (2006.01); C22C 1/05 (2006.01); C22C 29/16 (2006.01); C22C 32/00 (2006.01); C22F 1/18 (2006.01)

CPC (source: EP US)

B22F 3/24 (2013.01 - EP US); C22C 32/00 (2013.01 - EP US); C22C 32/0031 (2013.01 - EP US); C22C 32/0073 (2013.01 - EP US); C22F 1/18 (2013.01 - EP US)

Citation (examination)

Auszug eines auf dem 8 Plansee seminar, Reutte 1974, gehaltenen Vortrages von R. Eck, "Das Sintern von K-Si-dotiertem Mo und Eigenschaften des Fertigproduktes"

Designated contracting state (EPC)

CH DE FR GB IT LI NL SE

DOCDB simple family (publication)

WO 8805830 A1 19880811; AT 386612 B 19880926; AT A15887 A 19880215; DE 3865259 D1 19911107; EP 0299027 A1 19890118; EP 0299027 B1 19911002; JP 2609212 B2 19970514; JP H01502680 A 19890914; US 4950327 A 19900821

DOCDB simple family (application)

AT 8800002 W 19880126; AT 15887 A 19870128; DE 3865259 T 19880126; EP 88901002 A 19880126; JP 50126588 A 19880126; US 26495988 A 19880927