EP 0301565 A2 19890201 - Semiconductor device comprising a wiring layer.
Title (en)
Semiconductor device comprising a wiring layer.
Title (de)
Halbleiteranordnung mit einer Leiterschicht.
Title (fr)
Dipositif semi-conducteur comprenant une couche conductrice.
Publication
Application
Priority
JP 19206887 A 19870731
Abstract (en)
A semiconductor device includes at least one wiring layer (16, 23) containing aluminum as the major constituent and provided through an insulating film (12) on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film (13) having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fludity to and flatten the heat resistant high molecular organic film.
IPC 1-7
IPC 8 full level
H01L 21/31 (2006.01); H01L 21/312 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01)
CPC (source: EP KR US)
H01L 21/02118 (2013.01 - EP US); H01L 21/302 (2013.01 - KR); H01L 21/312 (2016.02 - US); H01L 21/76801 (2013.01 - EP US); H01L 21/76828 (2013.01 - EP US); H01L 21/76829 (2013.01 - EP US); H01L 23/5328 (2013.01 - EP US); H01L 21/02266 (2013.01 - EP US); H01L 21/02282 (2013.01 - EP US); H01L 2924/0002 (2013.01 - EP US); H01L 2924/12044 (2013.01 - EP US)
C-Set (source: EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0301565 A2 19890201; EP 0301565 A3 19900718; EP 0301565 B1 19940907; DE 3851392 D1 19941013; DE 3851392 T2 19950223; JP 2557898 B2 19961127; JP S6436031 A 19890207; KR 890002989 A 19890412; KR 920010127 B1 19921116; US 5101259 A 19920331; US 5302548 A 19940412
DOCDB simple family (application)
EP 88112311 A 19880729; DE 3851392 T 19880729; JP 19206887 A 19870731; KR 880009743 A 19880730; US 22647288 A 19880801; US 81905192 A 19920110