Global Patent Index - EP 0304077 B1

EP 0304077 B1 20001108 - Method of forming a fine pattern

Title (en)

Method of forming a fine pattern

Title (de)

Methode zur Erzeugung eines feinen Musters

Title (fr)

Méthode de formation de motifs fins

Publication

EP 0304077 B1 20001108 (EN)

Application

EP 88113503 A 19880819

Priority

JP 20674587 A 19870820

Abstract (en)

[origin: EP0304077A2] A photoresist is coated on a substrate to form a planar surface, thus to form recessed portions corresponding to a mask of a pattern to be formed in the photoresist layer having planar surface. SiO2 etc. are deposited into the recessed portions to prepare a mask, thus to form a fine pattern by anisotropic etching. As a result, by films remaining below the recessed portions formed in the photoresist layer having planar surface, a fine pattern is formed.

IPC 1-7

H01L 21/00; H01L 21/31; H01L 21/768; G03F 7/26

IPC 8 full level

H01L 21/027 (2006.01); H01L 21/302 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)

CPC (source: EP KR US)

H01L 21/00 (2013.01 - KR); H01L 21/0271 (2013.01 - EP US); H01L 21/31138 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0304077 A2 19890222; EP 0304077 A3 19900718; EP 0304077 B1 20001108; DE 3856441 D1 20001214; DE 3856441 T2 20010405; JP S6450425 A 19890227; KR 890004392 A 19890421; KR 930001956 B1 19930320; US 5032491 A 19910716

DOCDB simple family (application)

EP 88113503 A 19880819; DE 3856441 T 19880819; JP 20674587 A 19870820; KR 880010605 A 19880820; US 23472588 A 19880822