Global Patent Index - EP 0312383 A1

EP 0312383 A1 19890419 - Luminescing member, process for preparation thereof, and electroluminescent device employing same.

Title (en)

Luminescing member, process for preparation thereof, and electroluminescent device employing same.

Title (de)

Lumineszentes Material, Verfahren zur Herstellung desselben und dasselbe verwendende elektrolumineszente Vorrichtung.

Title (fr)

Matériau luminescent, procédé pour sa préparation, et dispositif électroluminescent l'utilisant.

Publication

EP 0312383 A1 19890419 (EN)

Application

EP 88309643 A 19881014

Priority

  • JP 25879287 A 19871014
  • JP 25879487 A 19871014
  • JP 25879887 A 19871014
  • JP 25879987 A 19871014

Abstract (en)

A luminescing member emits light as a result of application of excitation energy thereto, wherein a luminescing part comprises on ultrafine particle film formed by deposition of ultrafine particles. It is preferred that the ultrafine particles comprises an amorphous A:Ox or an amorphous A:O:H having an A-O-A bond and an A-OH bond, and the element A is at least one element selected from the group consisting of Si, C and Ge.

IPC 1-7

C09K 11/08; C09K 11/59; C09K 11/65; C09K 11/66

IPC 8 full level

C09K 11/08 (2006.01); C09K 11/59 (2006.01); C09K 11/65 (2006.01); C09K 11/66 (2006.01); C23C 16/22 (2006.01); C23C 16/56 (2006.01)

CPC (source: EP US)

C09K 11/08 (2013.01 - EP US); C09K 11/59 (2013.01 - EP US); C09K 11/592 (2013.01 - EP US); C09K 11/65 (2013.01 - EP US); C09K 11/66 (2013.01 - EP US); C09K 11/661 (2013.01 - EP US); C23C 16/22 (2013.01 - EP US); C23C 16/56 (2013.01 - EP US); Y10S 428/917 (2013.01 - EP US)

Citation (search report)

  • [A] APPLIED PHYSICS LETTERS, vol. 35, no. 12, December 1979, pages 937-939, American Institute of Physics, New York, US; J.I. PANKOVE et al.: "Photoluminescence from hydrogenated ion-implanted crystalline silicon"
  • [AD] APPLIED PHYSICS LETTERS, vol. 42, no. 4, February 1983, pages 369-371, American Institute of Physics, New York, US; D.J. WOLFORD et al.: "Efficient visible photoluminescence in the binary A-Si:Hx alloy system"
  • [A] CHEMICAL ABSTRACTS, vol. 105, no. 14, October 1986, page 555, no. 123447v, Columbus, Ohio, US; H. MA et al.: "Effects of bonded hydrogen on the photoluminescence properties of GD hydrogenated amorphous silicon thin films", & WULI XUEBAO 1986, 35(6), 725-30

Designated contracting state (EPC)

CH DE FR GB IT LI NL

DOCDB simple family (publication)

EP 0312383 A1 19890419; EP 0312383 B1 19920325; DE 3869542 D1 19920430; US 4931692 A 19900605

DOCDB simple family (application)

EP 88309643 A 19881014; DE 3869542 T 19881014; US 25647288 A 19881012