EP 0329047 B1 19950802 - MIS device with auxiliary gate.
Title (en)
MIS device with auxiliary gate.
Title (de)
MIS Bauelement mit zusätzlichem Gate.
Title (fr)
Dispositif MIS avec grille auxiliaire.
Publication
Application
Priority
JP 2868088 A 19880212
Abstract (en)
[origin: EP0329047A2] In a MOSFET of an LDD structure, a side wall (51) is made conductive and connected to a gate (3) through a resistance (13) thereby to cause hot carriers taken into the side wall (51) to be discharged to a gate (3) through the resistance (13), whereby a channel resistance is prevented from being increased by an effect of carriers accumulated in the side wall (51). As a result, a reliable MOSFET with a short channel can be provided which is not degraded even if it is used for a long time.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 29/423 (2006.01); H01L 29/43 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP US)
H01L 21/2815 (2013.01 - EP US); H01L 29/42376 (2013.01 - EP US); H01L 29/435 (2013.01 - EP US); H01L 29/4983 (2013.01 - EP US); H01L 29/6656 (2013.01 - EP US); H01L 29/6659 (2013.01 - EP US); H01L 29/7831 (2013.01 - EP US); H01L 29/7836 (2013.01 - EP US); Y10S 257/90 (2013.01 - EP US)
Citation (examination)
- PATENT ABSTRACTS OF JAPAN, vol. 11, no. 396 (E-568)(2843), 24 December 1987 ; & JP-A-62 156 873
- PATENT ABSTRACTS OF JAPAN, vol. 11, no. 341 (E-554)(2788), 7 November 1987 ; & JP-A-62 122 273
- PATENT ABSTRACTS OF JAPAN, vol. 11, no. 296 (E-568)(2843) ; & JP-A-62 156 783
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0329047 A2 19890823; EP 0329047 A3 19901010; EP 0329047 B1 19950802; DE 68923629 D1 19950907; DE 68923629 T2 19960321; JP 2667857 B2 19971027; JP H01205470 A 19890817; KR 0135607 B1 19980422; KR 890013796 A 19890926; US 5132758 A 19920721
DOCDB simple family (application)
EP 89102412 A 19890213; DE 68923629 T 19890213; JP 2868088 A 19880212; KR 890001460 A 19890209; US 30877789 A 19890209