Global Patent Index - EP 0344259 A4

EP 0344259 A4 19910424 - METHOD AND MEANS OF FABRICATING A SEMICONDUCTOR DEVICE PACKAGE

Title (en)

METHOD AND MEANS OF FABRICATING A SEMICONDUCTOR DEVICE PACKAGE

Publication

EP 0344259 A4 19910424 (EN)

Application

EP 89900040 A 19881026

Priority

US 11522887 A 19871030

Abstract (en)

[origin: WO8904552A1] A semiconductor device assembly is made without a molded package by using a tape having a patterned insulating layer (12) and a conductive layer (14) joined thereto. A semiconductor die (24) is seated on the conductive layer (14) and electrically connected to leads of the patterned conductive layer (14). A body frame (40) is positioned around the die (24) and electrical leads and connections, and an encapsulant material (28) is distributed over the frame (40) and within the frame (40) over the die (24) and electrical leads and connections.

IPC 1-7

H01L 23/48; H01L 29/52

IPC 8 full level

H01L 21/50 (2006.01); H01L 23/02 (2006.01); H01L 23/04 (2006.01); H01L 23/24 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 25/04 (2006.01); H01L 25/18 (2006.01)

CPC (source: EP KR)

H01L 21/50 (2013.01 - EP); H01L 23/3121 (2013.01 - EP); H01L 23/3135 (2013.01 - EP); H01L 23/48 (2013.01 - KR); H01L 23/4985 (2013.01 - EP); H01L 24/45 (2013.01 - EP); H01L 24/48 (2013.01 - EP); H01L 2224/16 (2013.01 - EP); H01L 2224/16225 (2013.01 - EP); H01L 2224/32145 (2013.01 - EP); H01L 2224/45144 (2013.01 - EP); H01L 2224/48091 (2013.01 - EP); H01L 2224/73265 (2013.01 - EP); H01L 2224/92247 (2013.01 - EP); H01L 2924/00014 (2013.01 - EP); H01L 2924/01014 (2013.01 - EP); H01L 2924/01079 (2013.01 - EP); H01L 2924/14 (2013.01 - EP); H01L 2924/181 (2013.01 - EP)

Citation (search report)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

WO 8904552 A1 19890518; EP 0344259 A1 19891206; EP 0344259 A4 19910424; JP 2664259 B2 19971015; JP H03503342 A 19910725; KR 890702249 A 19891223; KR 920008256 B1 19920925

DOCDB simple family (application)

US 8803790 W 19881026; EP 89900040 A 19881026; JP 50015888 A 19881026; KR 890701193 A 19890628