EP 0357321 B1 19940316 - Superconducting transistor.
Title (en)
Superconducting transistor.
Title (de)
Supraleitender Transistor.
Title (fr)
Transistor supraconducteur.
Publication
Application
Priority
JP 21256688 A 19880829
Abstract (en)
[origin: EP0357321A2] A superconducting transistor comprises a superconducting collector layer (1) a first barrier layer (2) provided on the superconducting collector layer (1), a superconducting base layer (3) provided on the first barrier layer (2), a second barrier layer (4) provided on the superconducting base layer (3), and a superconducting emitter layer (5) provided on the second barrier layer (4). All of the layers (1-5) are formed of substances having the same component elements but the composition differs from one layer to the next. The barrier layers (2, 4) have a low carrier concentration and do not have superconducting properties whilst the collector (1), base (3) and emitter (5) layers have a high carrier concentration and exhibit superconducting properties. The superconducting collector layer (1) draws out quasi-particles from the superconducting base layer (3) whilst its carrier concentration is maintained at a level lower than that in metal and at a high level where a superconducting property, is exhibited.
IPC 1-7
IPC 8 full level
B21B 37/30 (2006.01); H01L 39/22 (2006.01)
CPC (source: EP US)
H10N 60/128 (2023.02 - EP US); Y10S 505/70 (2013.01 - EP US); Y10S 505/701 (2013.01 - EP US); Y10S 505/702 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0357321 A2 19900307; EP 0357321 A3 19900718; EP 0357321 B1 19940316; DE 68913868 D1 19940421; JP H0262082 A 19900301; US 5106822 A 19920421
DOCDB simple family (application)
EP 89308504 A 19890822; DE 68913868 T 19890822; JP 21256688 A 19880829; US 39750689 A 19890823