EP 0363673 B1 19930818 - SPUTTER-DEPOSITED NICKEL LAYER AND PROCESS FOR DEPOSITING SAME
Title (en)
SPUTTER-DEPOSITED NICKEL LAYER AND PROCESS FOR DEPOSITING SAME
Publication
Application
Priority
- JP 18350289 A 19890714
- JP 23165388 A 19880915
Abstract (en)
[origin: EP0363673A1] Disclosed is a nickel layer formed on a substrate by sputtering, in which nickel layer a percent ratio of an X-ray diffraction peak intensity of the (200) plane of the nickel layer to that of the (111) plane of the nickel layer is not less than 10%. This nickel layer has a reduced stress, and therefore, lessens a bending of a substrate. The nickel layer is formed by a process for sputtering nickel on a substrate, comprising supplying an argon gas into a vacuum chamber, adjusting a pressure of the argon gas in the vacuum chamber to a predetermined value, ionizing the argon gas, bombarding a target containing nickel with the ionized argon gas, to sputter nickel atoms, and depositing the sputtered nickel atoms onto the substrate, wherein the predetermined pressure of the argon gas is not lower than 12 mTorr.
IPC 1-7
IPC 8 full level
C30B 28/12 (2006.01); C23C 14/02 (2006.01); C23C 14/14 (2006.01); C23C 14/16 (2006.01); C23C 14/18 (2006.01); C23C 14/34 (2006.01); C30B 29/02 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/45 (2006.01)
CPC (source: EP US)
C23C 14/025 (2013.01 - EP US); C23C 14/16 (2013.01 - EP US); C23C 14/165 (2013.01 - EP US); C23C 14/18 (2013.01 - EP US); H01L 29/456 (2013.01 - EP US); Y10T 428/12674 (2015.01 - EP US); Y10T 428/12889 (2015.01 - EP US); Y10T 428/12944 (2015.01 - EP US); Y10T 428/26 (2015.01 - EP US)
Citation (examination)
THIN SOLID FILMS, vol. 193/194, 1990, pp. 1056-1064, Elsevier Sequoia (NL); T.YONEYAMA et al.:"Thin film structure and adhesion of sputtered Ti-Ni layers on silicon"
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0363673 A1 19900418; EP 0363673 B1 19930818; DE 68908520 D1 19930923; DE 68908520 T2 19940224; JP H02167890 A 19900628; JP H0784647 B2 19950913; US 5876861 A 19990302
DOCDB simple family (application)
EP 89117064 A 19890914; DE 68908520 T 19890914; JP 18350289 A 19890714; US 65043796 A 19960520