Global Patent Index - EP 0367536 A2

EP 0367536 A2 19900509 - Rod base material for providing wafers used for electronic devices and a method of manufacturing wafers used for electronic device.

Title (en)

Rod base material for providing wafers used for electronic devices and a method of manufacturing wafers used for electronic device.

Title (de)

Stabförmiges Ausgangsmaterial für Scheiben für elektronische Bauelemente und Verfahren zur Herstellung solcher Scheiben.

Title (fr)

Matériau de base sous forme de barreaux pour la production de plaquettes pour composants électroniques et méthode de fabrication de ces plaquettes.

Publication

EP 0367536 A2 19900509 (EN)

Application

EP 89311180 A 19891030

Priority

JP 27797588 A 19881101

Abstract (en)

The rod base material for wafers comprises a plurality of rod members made of materials to be used as the wafers used for electronic devices which are assembled in parallel and bonded with each other into an integrated body. Wafers used for electronic devices can be obtained by slicing the rod base material for the wafers. Mirror-finished bonded face is formed to the outer surface for each of the rod members. The bonded face to each of the rod members is cleaned by a surface treatment using chemicals. Subsequently, respective rod members are assembled in parallel and brought into contact with each other at their respective bonded faces. The thus prepared rod base material are maintained in a heated atmosphere into an integrated body. Then, the rod base material is applied with slicing for providing wafers used for electronic devices. Since the rod base material has a structure in which a plurality of the rod members are assembled in parallel and bonded with each other into an integrated body, the diameter for the rod base material can remarkably be increased. Accordingly, the diameter of the wafers obtained by slicing the rod base material is also increased remarkably. Since the wafer diameter is increased remarkably, the cost per one electronic device formed on the wafer is also reduced remarkably.

IPC 1-7

C30B 33/00; H01L 21/00

IPC 8 full level

B28D 5/02 (2006.01); B28D 5/00 (2006.01); C30B 33/00 (2006.01); C30B 33/06 (2006.01); H01L 21/18 (2006.01); H01L 21/208 (2006.01); H01L 21/304 (2006.01)

CPC (source: EP KR US)

C30B 33/00 (2013.01 - EP US); H01L 21/187 (2013.01 - EP US); H01L 21/30 (2013.01 - KR); H01L 21/304 (2013.01 - EP US); Y10S 148/012 (2013.01 - EP US); Y10S 148/017 (2013.01 - EP US); Y10T 156/1052 (2015.01 - EP US)

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0367536 A2 19900509; EP 0367536 A3 19900926; EP 0367536 B1 19940330; CA 2001934 A1 19900501; CA 2001934 C 19941018; DE 68914249 D1 19940505; DE 68914249 T2 19940811; JP H02122617 A 19900510; JP H07101679 B2 19951101; KR 900008619 A 19900604; KR 930010970 B1 19931118; US 5100839 A 19920331; US 5105254 A 19920414

DOCDB simple family (application)

EP 89311180 A 19891030; CA 2001934 A 19891031; DE 68914249 T 19891030; JP 27797588 A 19881101; KR 890015753 A 19891031; US 42788789 A 19891030; US 64811091 A 19910131