EP 0373698 A3 19910925 - SELECTIVE ASPERITY DEFINITION TECHNIQUE SUITABLE FOR USE IN FABRICATING FLOATING-GATE TRANSISTOR
Title (en)
SELECTIVE ASPERITY DEFINITION TECHNIQUE SUITABLE FOR USE IN FABRICATING FLOATING-GATE TRANSISTOR
Publication
Application
Priority
US 28334088 A 19881212
Abstract (en)
[origin: EP0373698A2] In a semiconductor fabrication technique, a first patterned layer (16) of nonmonocrystalline semiconductor material is created on a substructure (10, 12, and 14). An insulating layer (22) is thermally grown along the patterned layer in such a way that the upper edge of the remainder (16A) of the patterned layer forms an asperity (24). A blanket layer 26, preferably consisting of nonmonocyrstalline semiconductor material, is formed over the insulating layer. Using an etchant that attacks the blanket and patterned layers more than the insulating layer, a selective etch is performed to remove a section of the blanket layer. The etch is continued past the blanket layer to remove the underlying portion of the insulating layer located along the asperity and then, importantly, to remove the so exposed part of the asperity. The remainder (26A) of the blanket layer overlies the remainder (24A) of the asperity. The technique is particularly useful in manufacturing a floating-gate FET for an electrically erasable programmable device. The remainder of the asperity facilitates tunneling during erasure.
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); G11C 16/04 (2006.01)
CPC (source: EP KR US)
H01L 21/18 (2013.01 - KR); H01L 29/40114 (2019.08 - EP US); H01L 29/66825 (2013.01 - EP US); H10B 41/10 (2023.02 - EP US); H10B 41/30 (2023.02 - EP US); G11C 16/0425 (2013.01 - EP US); H10B 69/00 (2023.02 - EP US); Y10S 438/964 (2013.01 - EP US)
Citation (search report)
- [A] EP 0253014 A1 19880120 - NIPPON DENSO CO [JP]
- [A] US 4757360 A 19880712 - FARAONE LORENZO [US]
- [AD] US 4763299 A 19880809 - HAZANI EMANUEL [US]
- [AD] US 4119995 A 19781010 - SIMKO RICHARD T
- [AP] US 4806202 A 19890221 - TANG DANIEL N [US], et al
Designated contracting state (EPC)
AT CH DE FR GB IT LI NL
DOCDB simple family (publication)
EP 0373698 A2 19900620; EP 0373698 A3 19910925; EP 0373698 B1 19950712; AT E125067 T1 19950715; DE 68923436 D1 19950817; DE 68923436 T2 19960321; JP 2942576 B2 19990830; JP H02246164 A 19901001; KR 0147293 B1 19981102; KR 900010955 A 19900711; US 5008212 A 19910416
DOCDB simple family (application)
EP 89203090 A 19891206; AT 89203090 T 19891206; DE 68923436 T 19891206; JP 32035889 A 19891208; KR 890018149 A 19891208; US 28334088 A 19881212