EP 0376752 B1 19940615 - A semiconductor laser device.
Title (en)
A semiconductor laser device.
Title (de)
Halbleiterlaservorrichtung.
Title (fr)
Dispositif laser à semi-conducteur.
Publication
Application
Priority
JP 33413888 A 19881229
Abstract (en)
[origin: EP0376752A2] A semiconductor laser device is disclosed which comprises a semiconductor substrate (1) having a ridge portion (9), the width of the ridge portion being smaller in the vicinity of the facets than in the inside of the device; a current blocking layer (2) formed on the substrate (1) including the ridge portion (9); at least one striped groove (11) formed on the center of the ridge portion (9) through the current blocking layer (2); and a multi-layered structure disposed on the current blocking layer (2), the multi-layered structure successively having a first cladding layer (3), an active layer (4) for laser oscillation, and a second cladding layer (5); wherein at least two side grooves (10) are symmetrically formed on both sides of the center region of the ridge portion (9) with the same width as that of the regions thereof near the facets. Also, disclosed is a method for producing the semiconductor laser device.
IPC 1-7
IPC 8 full level
H01S 5/00 (2006.01); H01S 5/042 (2006.01); H01S 5/10 (2006.01); H01S 5/16 (2006.01); H01S 5/223 (2006.01); H01S 5/24 (2006.01)
CPC (source: EP US)
H01S 5/10 (2013.01 - EP US); H01S 5/16 (2013.01 - EP US); H01S 5/2234 (2013.01 - EP US); H01S 5/2235 (2013.01 - EP US); H01S 5/24 (2013.01 - EP US)
Citation (examination)
J.E.E.E. JOURNAL OF QUANTUM ELECTRONICS, QE-23 (1987) June, No. 6, New York, N.Y., USA
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0376752 A2 19900704; EP 0376752 A3 19900816; EP 0376752 B1 19940615; DE 68916222 D1 19940721; DE 68916222 T2 19940929; JP H02180085 A 19900712; JP H0695589 B2 19941124; US 5054031 A 19911001
DOCDB simple family (application)
EP 89313703 A 19891229; DE 68916222 T 19891229; JP 33413888 A 19881229; US 45557489 A 19891222