Global Patent Index - EP 0386085 A4

EP 0386085 A4 19901128 - MOSFET IN SILICON CARBIDE

Title (en)

MOSFET IN SILICON CARBIDE

Publication

EP 0386085 A4 19901128 (EN)

Application

EP 88909938 A 19881026

Priority

US 11356487 A 19871026

Abstract (en)

[origin: WO8904056A1] The present invention comprises a metal-oxide-semiconductor field-effect transistor (MOSFET) formed in silicon carbide (12). The doped source (10) and doped drain (11) are formed by high temperature ion implantation of dopant ions into the silicon carbide (12).

IPC 1-7

H01L 21/265; H01L 29/78; H01L 29/167

IPC 8 full level

H01L 29/78 (2006.01); H01L 29/24 (2006.01)

CPC (source: EP KR)

H01L 29/1608 (2013.01 - EP); H01L 29/772 (2013.01 - KR)

Citation (search report)

  • [X] DE 3446961 A1 19850718 - SHARP KK [JP]
  • [YP] US 4757028 A 19880712 - KONDOH YASUSHI [JP], et al
  • [X] IEEE ELECTRON DEVICE LETTERS, vol. EDL-7, no. 12, December 1986, pages 692-693, IEEE, New York, US; K. SHIBAHARA et al.: "Fabrication of inversion-type n-channel MOSFET's using cubic-SiC on Si(100)"
  • [Y] APPLIED PHYSICS LETTERS, vol. 51, no. 6, 10th August 1987, pages 442-444, American Institute of Physics, New York, US; H.S. KONG et al.: "Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type beta-SiC grown via chemical vapor deposition"
  • [A] I.E.E.E. ELECTRON DEVICE LETTERS, vol. EDL-8, no. 2, February 1987, pages 48-49, IEEE, New York, US; K. FURUKAWA et al.: "Insulated-gate and junction-gate FET's of CVD-grown beta-SiC"
  • [A] JAPANESE JOURNAL OF APPLIED PHYSICS/PART 1: REGULAR PAPERS & SHORT NOTES, vol. 26, no. 2, February 1987, pages 310-311, Tokyo, JP; Y. KONDO et al.: "High-temperature operation of silicon carbide MOSFET"
  • [A] APPLIED PHYSICS LETTERS, vol. 49, no. 17, 27th October 1986, pages 1074-1076, American Institute of Physics; H.S. KONG et al.: "Epitaxial growth of beta-SiC thin films on 6H alpha-SiC substrates via chemical vapor deposition"
  • [A] JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 133, no. 3, March 1986, pages 650-652, Manchester, NH, US; J.A. EDMOND et al.: "Chemical etching of ion implanted amorphous silicon carbide"
  • [XD] JOURNAL OF APPLIED PHYSICS, vol. 64, no. 4, 15th August 1988, pages 2168-2177, American Institute of Physics, Woodbury, NY, US; J.W. PALMOUR et al.: "Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in beta-SiC thin films"
  • See references of WO 8904056A1

Designated contracting state (EPC)

DE FR GB IT NL SE

DOCDB simple family (publication)

WO 8904056 A1 19890505; CA 1313571 C 19930209; EP 0386085 A1 19900912; EP 0386085 A4 19901128; JP 2644028 B2 19970825; JP H03501670 A 19910411; KR 0137966 B1 19980601; KR 890702245 A 19891223

DOCDB simple family (application)

US 8803793 W 19881026; CA 581146 A 19881025; EP 88909938 A 19881026; JP 50917288 A 19881026; KR 890701157 A 19890626