EP 0386609 A1 19900912 - Method of removing a layer of organic matter.
Title (en)
Method of removing a layer of organic matter.
Title (de)
Methode zum Ätzen einer organischen Schicht.
Title (fr)
Méthode pour enlever une couche organique.
Publication
Application
Priority
JP 5605389 A 19890310
Abstract (en)
A method removes a first layer (31, 31a, 33) of an organic matter which is formed on a second layer (16), where the first layer is subjected to an ion implantation. The method includes the steps of generating a plasma by exciting a gas which includes H2O using a high-frequency energy source, and removing the first layer within the plasma.
IPC 1-7
IPC 8 full level
H01L 21/302 (2006.01); G03F 7/42 (2006.01); H01L 21/027 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01)
CPC (source: EP KR US)
G03F 7/427 (2013.01 - EP US); H01L 21/304 (2013.01 - KR); H01L 21/31138 (2013.01 - EP US)
Citation (search report)
- [Y] EP 0304068 A2 19890222 - FUJITSU LTD [JP]
- [A] EP 0123813 A2 19841107 - TOSHIBA KK [JP]
- [A] US 3837856 A 19740924 - IRVING S, et al
- [XP] EP 0328350 A2 19890816 - FUJITSU LTD [JP]
- [X] EXTENDED ABSTRACTS/SPRING MEETING, vol. 88-1, 15th-20th May 1988, pages 159-160, Princeton, NY, US; H. OKANO et al.: "Down-flow type resist ashing technique employing reaction of fluorine atoms to water vapor"
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0386609 A1 19900912; EP 0386609 B1 19950906; DE 69022082 D1 19951012; DE 69022082 T2 19960215; JP 2541851 B2 19961009; JP H02237118 A 19900919; KR 900015272 A 19901026; KR 930010980 B1 19931118; US 4980022 A 19901225
DOCDB simple family (application)
EP 90103922 A 19900228; DE 69022082 T 19900228; JP 5605389 A 19890310; KR 900003143 A 19900309; US 48855690 A 19900305