EP 0394878 A2 19901031 - Semiconductor device having multi-layered wiring structure.
Title (en)
Semiconductor device having multi-layered wiring structure.
Title (de)
Halbleiteranordnung mit Mehrschichtleiterstruktur.
Title (fr)
Dispositif semi-conducteur comprenant une structure conductrice multicouche.
Publication
Application
Priority
JP 10460889 A 19890426
Abstract (en)
A semiconductor device comprises a first pad region (upper 11) applied with a first potential (GND), a first line (12) led from the first pad region (upper 11) and connected to a first circuit (13), a second pad region (lower 11) integrated with the first pad region (upper 11) and applied also with the first potential, and a second line (14) led from the second pad region (lower 11) connected to a second circuit (15) and overlapped with the first line (12).
IPC 1-7
IPC 8 full level
H01L 21/3205 (2006.01); H01L 21/60 (2006.01); H01L 21/768 (2006.01); H01L 23/52 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC (source: EP KR US)
H01L 23/528 (2013.01 - KR); H01L 23/5286 (2013.01 - EP US); H01L 24/05 (2013.01 - EP US); H01L 24/06 (2013.01 - EP US); H01L 2224/05554 (2013.01 - EP US); H01L 2924/3011 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0394878 A2 19901031; EP 0394878 A3 19910515; EP 0394878 B1 19960320; DE 69025973 D1 19960425; DE 69025973 T2 19961114; JP H02284448 A 19901121; JP H0750708 B2 19950531; KR 900017164 A 19901115; KR 930009022 B1 19930918; US 5063433 A 19911105
DOCDB simple family (application)
EP 90107571 A 19900420; DE 69025973 T 19900420; JP 10460889 A 19890426; KR 900005895 A 19900426; US 50869290 A 19900413