EP 0416190 B1 19940601 - Method for mirror passivation of semiconductor laser diodes.
Title (en)
Method for mirror passivation of semiconductor laser diodes.
Title (de)
Verfahren zur Spiegelpassivierung bei Halbleiterlaserdioden.
Title (fr)
Méthode de passivation des miroirs des diodes laser à semi-conducteur.
Publication
Application
Priority
EP 89810668 A 19890907
Abstract (en)
[origin: EP0416190A1] A method for mirror passivation in the fabrication of semiconductor laser diodes. Key of the method are two basic steps : (1) providing a contamination-free mirror facet, followed by (2) in-situ application of a continuous, insulating or low conductive passivation layer which consists of a material that acts as a diffusion barrier for species capable of reacting with the semiconductor and that does not itself react with the mirror surface. The contamination-free mirror surface is obtained by either cleaving in an environment where no initial contamination takes place, or by cleaving in air or mirror etching, with subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.
IPC 1-7
IPC 8 full level
H01S 5/00 (2006.01); H01S 5/028 (2006.01); H01S 5/042 (2006.01); H01S 5/02 (2006.01)
CPC (source: EP US)
H01S 5/028 (2013.01 - EP US); H01S 5/0202 (2013.01 - EP US); H01S 5/0281 (2013.01 - EP US); H01S 5/0282 (2013.01 - EP US); Y10S 148/065 (2013.01 - EP US); Y10S 148/095 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0416190 A1 19910313; EP 0416190 B1 19940601; CA 2018501 A1 19910307; CA 2018501 C 19950815; DE 68915763 D1 19940707; DE 68915763 T2 19941208; JP H03101183 A 19910425; US 5063173 A 19911105
DOCDB simple family (application)
EP 89810668 A 19890907; CA 2018501 A 19900607; DE 68915763 T 19890907; JP 22457090 A 19900828; US 53862690 A 19900615