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EP 0416626 A3 19910529 - ELECTRON EMITTING SEMICONDUCTOR DEVICE

Title (en)

ELECTRON EMITTING SEMICONDUCTOR DEVICE

Publication

EP 0416626 A3 19910529 (EN)

Application

EP 90117200 A 19900906

Priority

JP 22171390 A 19900822
JP 23394389 A 19890907
JP 23394589 A 19890907

Abstract (en)

[origin: EP0416626A2] An electron emitting semiconductor device comprises a P-semiconductor layer (14) formed on a semiconductive substrate (11); a Shottky barrier electrode (16) formed on the P-semiconductor layer; plural P<+>-area units (15) positioned under and facing to the Shottky barrier electrode; and an N<+>-area (13) in the vicinity of said P<+>-area units.

IPC 1-7

H01J 1/30; H01J 9/02

IPC 8 full level

H01J 1/308 (2006.01)

CPC (source: EP)

H01J 1/308 (2013.01)

Citation (search report)

[A] EP 0331373 A2 19890906 - CANON KK [JP]
[A] US 4766340 A 19880823 - VAN DER MAST KAREL D [NL], et al

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0416626 A2 19910313; EP 0416626 A3 19910529; EP 0416626 B1 19940601; DE 69009357 D1 19940707; DE 69009357 T2 19941006

DOCDB simple family (application)

EP 90117200 A 19900906; DE 69009357 T 19900906