EP 0429509 B1 19971217 - METHOD AND APPARATUS FOR FORMING A SIDE WALL CONTACT IN A NONVOLATILE ELECTRICALLY ALTERABLE MEMORY CELL
Title (en)
METHOD AND APPARATUS FOR FORMING A SIDE WALL CONTACT IN A NONVOLATILE ELECTRICALLY ALTERABLE MEMORY CELL
Title (de)
VERFAHREN UND APPARAT ZUR HERSTELLUNG EINES SEITENWANDKONTAKTS IN EINER ELEKTRISCH VERÄNDERBAREN NICHTFLÜCHTIGEN SPEICHERZELLE
Title (fr)
PROCEDE ET APPAREIL DE FORMATION D'UN CONTACT PAR PAROI LATERALE DANS UN ELEMENT MEMOIRE ELECTRIQUEMENT MODIFIABLE DE TYPE REMANENT
Publication
Application
Priority
- US 8903157 W 19890721
- US 22781188 A 19880803
Abstract (en)
[origin: US5023694A] A nonvolatile integrated circuit memory cell (10) is provided which is smaller in size than conventional memory cells and uses only two layers of polysilicon with floating gate portion (50) of the memory cell formed partly from a first polysilicon layer (20) and partly from second polysilicon layer (26), contact between the two portions being made using residual polysilicon bridge or overlapping portion (34) between the two layers. The invention enables programming and erase tunneling oxides to be formed in a single step while maximizing the capacitive coupling between the floating gate (50) and the substrate (12) by forming a silicon dioxide layer (102) between the floating gate and substrate separately from formation of the programming (30) and erase (28) tunneling elements.
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 21/28 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR US)
H01L 29/40114 (2019.08 - EP US); H01L 29/66825 (2013.01 - EP US); H01L 29/78 (2013.01 - KR); H01L 29/7883 (2013.01 - EP US)
Designated contracting state (EPC)
AT BE CH DE FR GB IT LI LU NL SE
DOCDB simple family (publication)
WO 9001804 A1 19900222; AT E161360 T1 19980115; DE 68928501 D1 19980129; DE 68928501 T2 19980507; EP 0429509 A1 19910605; EP 0429509 A4 19920708; EP 0429509 B1 19971217; JP 2512181 B2 19960703; JP H04502232 A 19920416; KR 0165855 B1 19990115; KR 900702577 A 19901207; US 5023694 A 19910611
DOCDB simple family (application)
US 8903157 W 19890721; AT 89909313 T 19890721; DE 68928501 T 19890721; EP 89909313 A 19890721; JP 50878789 A 19890721; KR 900700686 A 19900402; US 22781188 A 19880803