EP 0431878 A2 19910612 - Process for forming high purity thin films.
Title (en)
Process for forming high purity thin films.
Title (de)
Verfahren zur Herstellung dünner Schichten von hoher Reinheit.
Title (fr)
Procédé pour former des couches minces de haute pureté.
Publication
Application
Priority
US 44522089 A 19891204
Abstract (en)
A method is described for the formation of high purity thin films on a semiconductor substrate (46). In the preferred embodiment of the invention a thin film is formed on a semiconductor substrate (46) in a plasma enhanced chemical vapor deposition system. Energized silicon ions are obtained by mass analysis and are accelerated into a hydrogen-free plasma. A reaction occurs between energized atoms within the plasma and the energized silicon ions resulting in the deposition of a thin film on the semiconductor substrate (46). <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/31 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01)
CPC (source: EP US)
H01L 21/02129 (2013.01 - EP US); H01L 21/02164 (2013.01 - US); H01L 21/0217 (2013.01 - US); H01L 21/02183 (2013.01 - EP US); H01L 21/02186 (2013.01 - EP US); H01L 21/022 (2013.01 - EP US); H01L 21/02205 (2013.01 - EP US); H01L 21/02274 (2013.01 - US); H01L 21/31608 (2013.01 - US); H01L 21/31612 (2013.01 - US); H01L 21/318 (2013.01 - US); H01L 21/3185 (2013.01 - US); H01L 21/02164 (2013.01 - EP); H01L 21/0217 (2013.01 - EP); H01L 21/02274 (2013.01 - EP); H01L 21/0228 (2013.01 - EP)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
US 4987102 A 19910122; DE 69010857 D1 19940825; DE 69010857 T2 19950119; EP 0431878 A2 19910612; EP 0431878 A3 19920304; EP 0431878 B1 19940720; JP 2596214 B2 19970402; JP H03185827 A 19910813
DOCDB simple family (application)
US 44522089 A 19891204; DE 69010857 T 19901204; EP 90313125 A 19901204; JP 33080890 A 19901130