EP 0432792 A2 19910619 - Nonvolatile semiconductor memory device and method of manufacturing the same.
Title (en)
Nonvolatile semiconductor memory device and method of manufacturing the same.
Title (de)
Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zu ihrer Herstellung.
Title (fr)
Dispositif de mémoire non volatile à semi-conducteur et son procédé de fabrication.
Publication
Application
Priority
JP 32539589 A 19891215
Abstract (en)
A nonvolatile semiconductor memory device is disclosed, which includes a semiconductor substrate (1), a field oxidation film (2) selectively formed on the semiconductor substrate (1), a first gate insulating film (5) formed on an exposed surface of the semiconductor substrate (1) and on the field oxidation film (2), a plurality of memory cells (5, 6, 8, 16), floating gate electrodes (6) and control gate electrodes (8) of the plurality of memory cells (5, 6, 8, 16), the floating gate and the control gate of each of the memory cells being isolated from those of other adjacent memory cells so as to be formed into an island, an insulating interlayer (13) formed on the field oxidation film (2) and on the control gate electrode (8), a contact hole (14) extending through the first insulating interlayer (13) so as to expose a portion of the control gate electrode (8), and a plurality of wires (15), formed on the insulating interlayer (13), for connecting the control gate electrodes (8) of memory cells of the plurality of memory cells (5, 6, 8, 16), which are adjacent to each other in a word line direction, through the first contact hole (14).
IPC 1-7
IPC 8 full level
H01L 21/8247 (2006.01); H01L 27/115 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01)
CPC (source: EP KR US)
H10B 41/00 (2023.02 - EP US); H10B 69/00 (2023.02 - EP KR US)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0432792 A2 19910619; EP 0432792 A3 19920506; EP 0432792 B1 19970618; DE 69030946 D1 19970724; DE 69030946 T2 19971127; JP H03185860 A 19910813; JP H0821638 B2 19960304; KR 910013585 A 19910808; KR 940002395 B1 19940324; US 5151761 A 19920929
DOCDB simple family (application)
EP 90124198 A 19901214; DE 69030946 T 19901214; JP 32539589 A 19891215; KR 900020674 A 19901215; US 62784690 A 19901214