EP 0445488 B1 19940601 - Semiconductor laser diode arrangement.
Title (en)
Semiconductor laser diode arrangement.
Title (de)
Halbleiterlaseranordnung.
Title (fr)
Dispositif laser à semi-conducteur.
Publication
Application
Priority
EP 90810179 A 19900308
Abstract (en)
[origin: EP0445488A1] A semiconductor device, formed on a wafer (13), comprises an array of laser diodes (Q1,Q2), each emitting a beam (B1,B2) parallel to the wafer surface, and, integrated with the array, individually tilted deflecting mirrors (R1,R2) forming an array of virtual sources (Q1',Q2'). Compared to the physical separation of the laser diodes, the virtual sources are spaced more closely, they can even be coincident, thereby reducing the apparent spacing between the beam origins. The reflected beams (B1',B2') are substantially perpendicular to the wafer providing a "surface-emitting" device. The required deflector configuration (54) can be fabricated in a single unidirectional process, the mirror positions and orientations being determined by proper segment geometry of the etch-mask. <IMAGE>
IPC 1-7
IPC 8 full level
G02B 5/08 (2006.01); H01S 3/00 (2006.01); H01S 5/00 (2006.01); H01S 5/18 (2006.01); H01S 5/185 (2021.01); H01S 5/42 (2006.01)
CPC (source: EP US)
G02B 5/08 (2013.01 - EP US); H01S 3/005 (2013.01 - EP US); H01S 5/185 (2021.01 - EP US); H01S 5/42 (2013.01 - EP US); H01S 5/005 (2013.01 - EP US)
Designated contracting state (EPC)
DE FR GB IT
DOCDB simple family (publication)
EP 0445488 A1 19910911; EP 0445488 B1 19940601; CA 2036957 A1 19910909; CA 2036957 C 19940906; DE 69009448 D1 19940707; DE 69009448 T2 19941201; JP H04218992 A 19920810; JP H0642586 B2 19940601; US 5100220 A 19920331
DOCDB simple family (application)
EP 90810179 A 19900308; CA 2036957 A 19910225; DE 69009448 T 19900308; JP 4411691 A 19910218; US 59425490 A 19901009