EP 0460918 B1 19950906 - Semiconductor device having improved insulated gate type transistor.
Title (en)
Semiconductor device having improved insulated gate type transistor.
Title (de)
Halbleiteranordnung mit verbessertem Transistor vom isolierten Gatetyp.
Title (fr)
Dispositif semi-conducteur avec transistor de type grille isolée amélioré.
Publication
Application
Priority
JP 14454490 A 19900604
Abstract (en)
[origin: EP0460918A2] A semiconductor device comprises an insulated gate type transistor having source and drain regions comprising semiconductors, a gate insulation film and a gate electrode region. The source and drain regions, the gate insulation film, and the gate electrode region are juxtaposed in the direction along the main face of a semiconductor substrate. At least, a part of them is buried in said substrate. <IMAGE>
IPC 1-7
IPC 8 full level
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/336 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01)
CPC (source: EP KR US)
H01L 21/76879 (2013.01 - EP US); H01L 29/4232 (2013.01 - EP US); H01L 29/66666 (2013.01 - EP US); H01L 29/78 (2013.01 - EP KR US)
Designated contracting state (EPC)
AT BE CH DE DK ES FR GB GR IT LI LU NL SE
DOCDB simple family (publication)
EP 0460918 A2 19911211; EP 0460918 A3 19920506; EP 0460918 B1 19950906; AT E127618 T1 19950915; CN 1032173 C 19960626; CN 1057131 A 19911218; DE 69112713 D1 19951012; DE 69112713 T2 19960222; ES 2076468 T3 19951101; JP 2790362 B2 19980827; JP H0438877 A 19920210; KR 920001749 A 19920130; KR 950006482 B1 19950615; MY 107193 A 19950930; US 5302846 A 19940412
DOCDB simple family (application)
EP 91305045 A 19910604; AT 91305045 T 19910604; CN 91103681 A 19910603; DE 69112713 T 19910604; ES 91305045 T 19910604; JP 14454490 A 19900604; KR 910008738 A 19910528; MY PI19910958 A 19910531; US 98689092 A 19921208