EP 0468377 A1 19920129 - Preparation of silicon carbide whiskers.
Title (en)
Preparation of silicon carbide whiskers.
Title (de)
Herstellung von Siliciumcarbid-Whiskern.
Title (fr)
Préparation de trichites en carbure de silicium.
Publication
Application
Priority
US 56690890 A 19900724
Abstract (en)
Silicon carbide single crystals are prepared by (1) reacting silica gel, silicic acid or silicon dioxide with an inorganic base and a multifunctional alcohol or a multifunctional phenol to produce a carbon-containing chemically activated silicon compound, (2) mixing the activated silicon compound with carbon black or graphite and (3) heating the mixture to 1300 DEG to 1700 DEG C under a non-oxidizing atmosphere.
IPC 1-7
IPC 8 full level
C30B 25/00 (2006.01); C30B 29/36 (2006.01); C30B 29/62 (2006.01)
CPC (source: EP)
C30B 25/005 (2013.01); C30B 29/36 (2013.01)
Citation (search report)
- [A] EP 0290258 A1 19881109 - STANDARD OIL CO OHIO [US]
- [AD] PATENT ABSTRACTS OF JAPAN vol. 13, no. 56 (C-566)(3404) February 8, 1989 & JP-A-63 248 798 (KAWASAKI STEEL CORP ) October 17, 1988
Designated contracting state (EPC)
BE DE FR GB SE
DOCDB simple family (publication)
EP 0468377 A1 19920129; EP 0468377 B1 19941221; CA 2043679 A1 19920125; DE 69106066 D1 19950202; DE 69106066 T2 19950511; JP 3224406 B2 20011029; JP H04265299 A 19920921
DOCDB simple family (application)
EP 91112105 A 19910719; CA 2043679 A 19910531; DE 69106066 T 19910719; JP 27447491 A 19910724