EP 0472902 A2 19920304 - Silicon controlled rectifier gate conduction detector.
Title (en)
Silicon controlled rectifier gate conduction detector.
Title (de)
Gate-Leitfähigkeitsdetektor eines Siliziumthyristors.
Title (fr)
Dispositif pour détecter la conductibilité de la gâchette dans un thyristor au silicium.
Publication
Application
Priority
US 57396990 A 19900828
Abstract (en)
An apparatus and method relative to the operation of a silicon controlled rectifier for providing a determination when the SCR is completely off and capable of blocking an applied potential. The technique described senses the amplitude of the SCR voltage at the gate terminal (32) in reference to the cathode. After the driving signal (A) to the SCR is removed, the gate voltage in reference to the cathode, is monitored. A predetermined threshold voltage level is compared in a comparing means (IC2) to the measured gate to cathode voltage to provide a logical output level to indicate when the gate voltage places the SCR in a non-conductive off state. <IMAGE>
IPC 1-7
IPC 8 full level
G01R 31/26 (2006.01); H03K 17/18 (2006.01); H03K 17/73 (2006.01)
CPC (source: EP)
G01R 31/263 (2013.01); H03K 17/18 (2013.01)
Designated contracting state (EPC)
DE FR GB
DOCDB simple family (publication)
EP 0472902 A2 19920304; EP 0472902 A3 19940615; JP 2552042 B2 19961106; JP H05312896 A 19931126
DOCDB simple family (application)
EP 91112363 A 19910724; JP 20223591 A 19910718