Global Patent Index - EP 0481328 B1

EP 0481328 B1 19961227 - Bidirectional current sensing for power MOSFETS

Title (en)

Bidirectional current sensing for power MOSFETS

Title (de)

Bidirektionale Stromabtastung für Leistungsmosfets

Title (fr)

Balayage de courant bi-directionnel pour dispositif mos de puissance à effet de champ

Publication

EP 0481328 B1 19961227 (EN)

Application

EP 91117091 A 19911008

Priority

US 60004090 A 19901019

Abstract (en)

[origin: EP0481328A2] A circuit capable of being integrated into a self-isolated DMOST is driven by a sense resistor that is created from the DMOST drain metallization. The circuit produces an output current that is ratioed with respect to the DMOST current with the ratio being determined by the value of a single resistor. The output current is sourced when the DMOST conducts its source current and the output current is sunk when the DMOST shunt diode conducts. Thus, the circuit not only produces a DMOST current related output it also distinguishes the mode of DMOST conduction. <IMAGE>

IPC 1-7

H03K 17/12; H02P 7/28; H03K 17/51; H03K 17/16; H03K 19/094; H02P 7/295; G01R 31/26; H02P 7/00; H03K 17/687

IPC 8 full level

G01R 19/00 (2006.01); G01R 31/26 (2006.01); H01L 21/336 (2006.01); H01L 27/04 (2006.01); H01L 29/78 (2006.01); H02P 7/00 (2006.01); H03K 17/00 (2006.01); H03K 17/687 (2006.01)

CPC (source: EP KR US)

G01R 19/00 (2013.01 - KR); G01R 31/2621 (2013.01 - EP US); H02P 7/04 (2016.02 - EP US); H03K 17/687 (2013.01 - EP US)

Designated contracting state (EPC)

DE FR GB IT NL

DOCDB simple family (publication)

US 5084633 A 19920128; DE 69123813 D1 19970206; DE 69123813 T2 19970710; EP 0481328 A2 19920422; EP 0481328 A3 19930818; EP 0481328 B1 19961227; JP H04290965 A 19921015; KR 0170404 B1 19990330; KR 920008498 A 19920528

DOCDB simple family (application)

US 60004090 A 19901019; DE 69123813 T 19911008; EP 91117091 A 19911008; JP 26514591 A 19911015; KR 910018385 A 19911018