Title (en)

PATTERN SHIFT MEASURING METHOD

Publication

EP 0484665 A3 19930707 (EN)

Application

EP 91116143 A 19910923

Priority

JP 29697790 A 19901031

Abstract (en)

[origin: EP0484665A2] A method of measuring pattern shift on a diffused semiconductor wafer after an epitaxial process comprising: measuring a ratio between the line width of a linear pattern vertical to an orientation flat and line width of a linear pattern parallel to the orientation flat to determine the shift between these patterns. <IMAGE>

IPC 1-7

G01C 9/00

IPC 8 full level

G01B 11/00 (2006.01); G01B 21/00 (2006.01); G01N 21/88 (2006.01); G03F 9/00 (2006.01); G06T 1/00 (2006.01); G06T 7/00 (2006.01); H01L 21/66 (2006.01)

CPC (source: EP US)

G06T 7/70 (2016.12 - EP US); G06T 2207/30148 (2013.01 - EP US)

Citation (search report)

• [A] EP 0352004 A2 19900124 - APPLIED MATERIALS INC [US]
• [A] US 4363962 A 19821214 - SHIDA TAKAO
• [A] GB 2147411 A 19850509 - CANON KK
• [A] EP 0013729 A1 19800806 - IBM [US]
• [A] EP 0316624 A2 19890524 - LASERSENSE INC [US]

Designated contracting state (EPC)

DE FR GB

DOCDB simple family (publication)

EP 0484665 A2 19920513; EP 0484665 A3 19930707; EP 0484665 B1 19951213; DE 69115446 D1 19960125; DE 69115446 T2 19960502; JP H04168312 A 19920616; JP H07111340 B2 19951129; US 5241361 A 19930831

DOCDB simple family (application)

EP 91116143 A 19910923; DE 69115446 T 19910923; JP 29697790 A 19901031; US 76372391 A 19910923